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SIDR390DP-T1-GE3
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SIDR390DP-T1-GE3

Introduction

SIDR390DP-T1-GE3 is a high-performance semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power management applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: High-power handling capability
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 30A
  • On-Resistance: 3.9mΩ
  • Gate Charge: 39nC
  • Operating Temperature Range: -55°C to 175°C
  • Mounting Type: Surface Mount

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain
  4. N/C (Not Connected)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability
  • ESD protection for robustness

Advantages and Disadvantages

Advantages

  • High power-handling capability
  • Efficient power management
  • Robust and reliable performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SIDR390DP-T1-GE3 operates based on the principle of controlling the flow of current between the source and drain terminals using the gate voltage. By modulating the gate voltage, the on-resistance of the MOSFET can be controlled, allowing efficient power management in various applications.

Detailed Application Field Plans

The SIDR390DP-T1-GE3 is suitable for a wide range of power management applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

  • Alternative Model 1: SIDR380DP-T1-GE3

    • Voltage Rating: 80V
    • Current Rating: 30A
    • On-Resistance: 3.8mΩ

  • Alternative Model 2: SIDR400DP-T1-GE3

    • Voltage Rating: 120V
    • Current Rating: 30A
    • On-Resistance: 4.0mΩ

  • Alternative Model 3: SIDR370DP-T1-GE3

    • Voltage Rating: 70V
    • Current Rating: 30A
    • On-Resistance: 3.7mΩ

In conclusion, the SIDR390DP-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and robust performance, making it an ideal choice for various power management applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIDR390DP-T1-GE3 i tekniska lösningar

  1. What is the maximum voltage rating for SIDR390DP-T1-GE3?

    • The maximum voltage rating for SIDR390DP-T1-GE3 is 30V.

  2. What is the typical application of SIDR390DP-T1-GE3?

    • SIDR390DP-T1-GE3 is commonly used in high-speed data transmission applications, such as in networking equipment and communication systems.

  3. What is the operating temperature range for SIDR390DP-T1-GE3?

    • The operating temperature range for SIDR390DP-T1-GE3 is typically -40°C to 125°C.

  4. What are the key features of SIDR390DP-T1-GE3?

    • SIDR390DP-T1-GE3 features low capacitance, low leakage current, and high ESD protection, making it suitable for high-speed data interfaces.

  5. Is SIDR390DP-T1-GE3 RoHS compliant?

    • Yes, SIDR390DP-T1-GE3 is RoHS compliant, ensuring it meets environmental standards.

  6. What package type does SIDR390DP-T1-GE3 come in?

    • SIDR390DP-T1-GE3 is available in a compact DFN package, which is suitable for space-constrained applications.

  7. Can SIDR390DP-T1-GE3 be used for USB 3.0 applications?

    • Yes, SIDR390DP-T1-GE3 is suitable for USB 3.0 and other high-speed data interface applications.

  8. Does SIDR390DP-T1-GE3 require any external components for proper operation?

    • SIDR390DP-T1-GE3 does not require any external components and can be directly integrated into the circuit.

  9. What are the typical insertion loss and return loss values for SIDR390DP-T1-GE3?

    • The typical insertion loss is low, and the return loss is high, making SIDR390DP-T1-GE3 ideal for maintaining signal integrity.

  10. Are there any recommended layout guidelines for using SIDR390DP-T1-GE3 in a PCB design?

    • Yes, it is recommended to follow the layout guidelines provided in the datasheet to ensure optimal performance of SIDR390DP-T1-GE3 in a PCB design.