Bild kan vara representation.
Se specifikationer för produktinformation.
SI5414DC-T1-GE3

SI5414DC-T1-GE3

Introduction

The SI5414DC-T1-GE3 is a high-performance power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power MOSFET
  • Characteristics: High performance, low on-resistance, fast switching speed
  • Package: DFN-8 (Dual Flat No-Lead)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

The SI5414DC-T1-GE3 features a maximum drain-source voltage of 30V, a continuous drain current of 17A, and a low on-resistance of 5.5mΩ at VGS = 10V. Additionally, it has a low gate charge and a fast switching speed, making it suitable for high-frequency applications.

Detailed Pin Configuration

The SI5414DC-T1-GE3 follows a standard pin configuration for a DFN-8 package, with the drain, source, and gate pins clearly labeled for easy integration into circuit designs.

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for high-frequency applications
  • Low gate charge for efficient control
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High performance - Efficient power management - Suitable for high-frequency applications

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

The SI5414DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals. Its low on-resistance and fast switching speed contribute to its efficient power management capabilities.

Detailed Application Field Plans

The SI5414DC-T1-GE3 is commonly used in various applications such as: - Switching power supplies - DC-DC converters - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI5414DC-T1-GE3 include: - SI5435DC-T1-GE3 - SI5456DC-T1-GE3 - SI5478DC-T1-GE3

In conclusion, the SI5414DC-T1-GE3 is a versatile power MOSFET with high performance and efficiency, making it an ideal choice for a wide range of electronic applications.

Word Count: 324

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI5414DC-T1-GE3 i tekniska lösningar

  1. What is the maximum voltage rating for SI5414DC-T1-GE3?

    • The maximum voltage rating for SI5414DC-T1-GE3 is typically 20V.
  2. What is the maximum continuous drain current for SI5414DC-T1-GE3?

    • The maximum continuous drain current for SI5414DC-T1-GE3 is typically 5.7A.
  3. What is the typical on-resistance for SI5414DC-T1-GE3?

    • The typical on-resistance for SI5414DC-T1-GE3 is around 9.5mΩ.
  4. Can SI5414DC-T1-GE3 be used in automotive applications?

    • Yes, SI5414DC-T1-GE3 is suitable for automotive applications.
  5. What is the operating temperature range for SI5414DC-T1-GE3?

    • The operating temperature range for SI5414DC-T1-GE3 is typically -55°C to 150°C.
  6. Does SI5414DC-T1-GE3 have built-in ESD protection?

    • Yes, SI5414DC-T1-GE3 features built-in ESD protection.
  7. What is the typical gate charge for SI5414DC-T1-GE3?

    • The typical gate charge for SI5414DC-T1-GE3 is around 10nC.
  8. Is SI5414DC-T1-GE3 suitable for power management applications?

    • Yes, SI5414DC-T1-GE3 is well-suited for power management applications.
  9. What package type does SI5414DC-T1-GE3 come in?

    • SI5414DC-T1-GE3 is available in a PowerPAK® SO-8 package.
  10. Are there any application notes or reference designs available for using SI5414DC-T1-GE3?

    • Yes, application notes and reference designs are available to assist with the implementation of SI5414DC-T1-GE3 in various technical solutions.