Bild kan vara representation.
Se specifikationer för produktinformation.
SI5402DC-T1-GE3

SI5402DC-T1-GE3

Introduction

The SI5402DC-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductor
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 3600pF @ 15V

Detailed Pin Configuration

The SI5402DC-T1-GE3 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S). The pinout arrangement is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

  • High Efficiency: Enables energy-efficient operation in power management systems.
  • Low On-Resistance: Minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Facilitates rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High efficiency and reliability
  • Low power dissipation
  • Compact package size for space-constrained designs

Disadvantages

  • Sensitivity to overvoltage conditions
  • Limited maximum voltage and current ratings

Working Principles

The SI5402DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. By adjusting the gate-source voltage, the MOSFET can efficiently regulate the power flow within electronic circuits.

Detailed Application Field Plans

The SI5402DC-T1-GE3 finds extensive application in various fields, including: - Power Management Systems: Utilized in voltage regulation, power conversion, and motor control circuits. - Switching Power Supplies: Enables efficient power switching and control in DC-DC converters and inverters. - Automotive Electronics: Used in automotive powertrain, lighting, and infotainment systems.

Detailed and Complete Alternative Models

Several alternative models to the SI5402DC-T1-GE3 include: - SI5446DC-T1-GE3: Similar power MOSFET with enhanced current handling capabilities. - SI5438DC-T1-GE3: Lower on-resistance variant suitable for high-current applications. - SI5421DC-T1-GE3: Compact MOSFET with optimized gate charge for fast switching requirements.

In conclusion, the SI5402DC-T1-GE3 power MOSFET offers high efficiency, fast switching, and reliable performance, making it an essential component in modern electronic systems.

[Word Count: 498]

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI5402DC-T1-GE3 i tekniska lösningar

Sure, here are 10 common questions and answers related to the application of SI5402DC-T1-GE3 in technical solutions:

  1. What is the maximum voltage rating for SI5402DC-T1-GE3?

    • The maximum voltage rating for SI5402DC-T1-GE3 is typically 20V.
  2. What is the typical input capacitance of SI5402DC-T1-GE3?

    • The typical input capacitance of SI5402DC-T1-GE3 is around 1500pF.
  3. What is the recommended operating temperature range for SI5402DC-T1-GE3?

    • The recommended operating temperature range for SI5402DC-T1-GE3 is -55°C to 150°C.
  4. What is the typical on-resistance of SI5402DC-T1-GE3?

    • The typical on-resistance of SI5402DC-T1-GE3 is around 30mΩ.
  5. Can SI5402DC-T1-GE3 be used in automotive applications?

    • Yes, SI5402DC-T1-GE3 is suitable for use in automotive applications.
  6. What is the maximum continuous drain current for SI5402DC-T1-GE3?

    • The maximum continuous drain current for SI5402DC-T1-GE3 is typically 6A.
  7. Does SI5402DC-T1-GE3 have built-in ESD protection?

    • Yes, SI5402DC-T1-GE3 is designed with built-in ESD protection.
  8. What is the typical gate charge of SI5402DC-T1-GE3?

    • The typical gate charge of SI5402DC-T1-GE3 is around 9nC.
  9. Is SI5402DC-T1-GE3 RoHS compliant?

    • Yes, SI5402DC-T1-GE3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.
  10. What are some common applications for SI5402DC-T1-GE3?

    • Common applications for SI5402DC-T1-GE3 include power management, load switching, battery protection, and motor control in various electronic devices and systems.

I hope these questions and answers are helpful for your technical solutions involving SI5402DC-T1-GE3! Let me know if you need further assistance.