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SI4946BEY-T1-GE3

SI4946BEY-T1-GE3

Introduction

The SI4946BEY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductor Product
  • Use: Power MOSFET for electronic applications
  • Characteristics: High power handling, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Available in tape and reel packaging with varying quantities

Specifications

  • Voltage - Drain-Source Breakdown (Max): [Insert value]
  • Current - Continuous Drain (Id) @ 25°C: [Insert value]
  • Rds On (Max) @ Id, Vgs: [Insert value]
  • Vgs(th) (Max) @ Id: [Insert value]
  • Input Capacitance (Ciss) @ Vds: [Insert value]
  • Power Dissipation (Max): [Insert value]

Detailed Pin Configuration

The SI4946BEY-T1-GE3 features a standard pin configuration with clear labeling for easy integration into electronic circuits.

Functional Features

  • High power handling capability
  • Low on-resistance for efficient power transfer
  • Fast switching speed for responsive performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Reliable performance in demanding applications
  • Compact package for space-constrained designs

Disadvantages

  • Higher cost compared to traditional components
  • Sensitive to voltage spikes if not properly protected

Working Principles

The SI4946BEY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to regulate power flow within electronic circuits.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Switching power supplies - Motor control systems - LED lighting applications - Battery management systems

Detailed and Complete Alternative Models

  • SI4948BEY-T1-GE3: Similar specifications with higher power handling
  • SI4950BEY-T1-GE3: Lower on-resistance for improved efficiency
  • SI4962BEY-T1-GE3: Enhanced thermal performance for high-temperature environments

In conclusion, the SI4946BEY-T1-GE3 power MOSFET offers reliable and efficient power management capabilities, making it a preferred choice for various electronic applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI4946BEY-T1-GE3 i tekniska lösningar

  1. What is the maximum drain-source voltage of SI4946BEY-T1-GE3?

    • The maximum drain-source voltage is 30V.
  2. What is the continuous drain current of SI4946BEY-T1-GE3?

    • The continuous drain current is 11A.
  3. What is the on-resistance of SI4946BEY-T1-GE3?

    • The on-resistance is typically 9.5mΩ at Vgs=10V.
  4. What is the gate threshold voltage of SI4946BEY-T1-GE3?

    • The gate threshold voltage is typically 1.5V.
  5. What is the power dissipation of SI4946BEY-T1-GE3?

    • The power dissipation is 2.5W.
  6. What are the typical applications for SI4946BEY-T1-GE3?

    • Typical applications include power management in automotive systems, industrial equipment, and battery protection circuits.
  7. What is the operating temperature range of SI4946BEY-T1-GE3?

    • The operating temperature range is -55°C to 150°C.
  8. Is SI4946BEY-T1-GE3 RoHS compliant?

    • Yes, it is RoHS compliant.
  9. What is the package type of SI4946BEY-T1-GE3?

    • It comes in a DPAK (TO-252) package.
  10. Does SI4946BEY-T1-GE3 have built-in ESD protection?

    • Yes, it has built-in ESD protection up to 2kV.