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SI4943BDY-T1-E3
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SI4943BDY-T1-E3

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications
  • Characteristics: Low on-resistance, high-speed switching, low gate charge
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 20nC @ 10V

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Fast switching speed
  • Low on-resistance
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Reduced power dissipation
  • Compact package size

Disadvantages

  • Sensitivity to static electricity
  • Limited voltage handling capability

Working Principles

The SI4943BDY-T1-E3 operates based on the principles of field-effect transistors, utilizing a gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • SI4943DY-T1-E3: Similar specifications and characteristics
  • SI4953BDY-T1-E3: Higher voltage handling capacity

In conclusion, the SI4943BDY-T1-E3 Power MOSFET offers efficient power management with its low on-resistance and high-speed switching capabilities. It is well-suited for various switching applications in industries such as power supplies, motor control, LED lighting, and battery management systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI4943BDY-T1-E3 i tekniska lösningar

Sure, here are 10 common questions and answers related to the application of SI4943BDY-T1-E3 in technical solutions:

  1. What is the maximum drain-source voltage (VDS) for SI4943BDY-T1-E3?

    • The maximum drain-source voltage for SI4943BDY-T1-E3 is 30V.

  2. What is the continuous drain current (ID) for SI4943BDY-T1-E3?

    • The continuous drain current for SI4943BDY-T1-E3 is 8.5A.

  3. What is the on-resistance (RDS(on)) for SI4943BDY-T1-E3?

    • The on-resistance for SI4943BDY-T1-E3 is typically 9.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage (VGS(th)) for SI4943BDY-T1-E3?

    • The gate threshold voltage for SI4943BDY-T1-E3 is typically 1.0V to 2.5V.

  5. What is the power dissipation (PD) for SI4943BDY-T1-E3?

    • The power dissipation for SI4943BDY-T1-E3 is 2.5W.

  6. What are the typical applications for SI4943BDY-T1-E3?

    • SI4943BDY-T1-E3 is commonly used in power management, load switching, and battery protection applications.

  7. What is the operating temperature range for SI4943BDY-T1-E3?

    • The operating temperature range for SI4943BDY-T1-E3 is -55°C to 150°C.

  8. Does SI4943BDY-T1-E3 have built-in ESD protection?

    • Yes, SI4943BDY-T1-E3 has built-in ESD protection, making it suitable for robust and reliable designs.

  9. What is the package type for SI4943BDY-T1-E3?

    • SI4943BDY-T1-E3 is available in a D-PAK (TO-252) package.

  10. Is SI4943BDY-T1-E3 RoHS compliant?

    • Yes, SI4943BDY-T1-E3 is RoHS compliant, meeting environmental standards for lead-free manufacturing.

I hope these answers provide the information you were looking for! If you need further details, feel free to ask.