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SI4923DY-T1-GE3
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SI4923DY-T1-GE3

Product Overview

Category

SI4923DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI4923DY-T1-GE3 comes in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

The SI4923DY-T1-GE3 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 20A
  • On-Resistance (RDS(on)): 9.5mΩ
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The SI4923DY-T1-GE3 has the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. N/C (Not connected) 5. N/C (Not connected) 6. Source (S) 7. Drain (D) 8. N/C (Not connected)

Functional Features

  • Low on-resistance for minimal power loss
  • High voltage capability for versatile applications
  • Fast switching speed for efficient power management
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Versatile applications
  • Reliable thermal performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI4923DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI4923DY-T1-GE3 is widely used in: - Switching power supplies - Motor control systems - Battery management - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to SI4923DY-T1-GE3 include: - SI4923DY-T1-E3 - SI4923DY-T1-RE3 - SI4923DY-T1-GE3-ND

In conclusion, the SI4923DY-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI4923DY-T1-GE3 i tekniska lösningar

  1. What is the SI4923DY-T1-GE3 used for?

    • The SI4923DY-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET in a small SOT-23 package, commonly used for power management and switching applications.

  2. What are the key specifications of the SI4923DY-T1-GE3?

    • The SI4923DY-T1-GE3 has a maximum drain-source voltage of 30 V, a continuous drain current of 2.7 A, and a low on-resistance of 0.065 ohms.

  3. How can the SI4923DY-T1-GE3 be utilized in power management solutions?

    • It can be used to switch and control power in various applications such as battery management, DC-DC converters, and load switches.

  4. What are the thermal considerations when using the SI4923DY-T1-GE3?

    • Proper heat sinking and thermal management should be considered to ensure the MOSFET operates within its specified temperature range for optimal performance and reliability.

  5. Are there any application notes or reference designs available for the SI4923DY-T1-GE3?

    • Yes, the manufacturer provides application notes and reference designs to assist with the proper implementation of the SI4923DY-T1-GE3 in technical solutions.

  6. Can the SI4923DY-T1-GE3 be used in automotive applications?

    • Yes, it is suitable for automotive applications where its high efficiency and small form factor are beneficial.

  7. What are the typical input and output capacitance values for the SI4923DY-T1-GE3?

    • The typical input capacitance is 800 pF, and the typical output capacitance is 70 pF.

  8. Does the SI4923DY-T1-GE3 require any external components for operation?

    • It may require external components such as resistors, capacitors, and inductors depending on the specific application and circuit requirements.

  9. What are the recommended operating conditions for the SI4923DY-T1-GE3?

    • The recommended operating temperature range is -55°C to 150°C, and the maximum allowable power dissipation is determined by the device's thermal resistance.

  10. Where can I find the detailed datasheet for the SI4923DY-T1-GE3?

    • The detailed datasheet for the SI4923DY-T1-GE3 can be obtained from the manufacturer's website or authorized distributors.