SI4411DY-T1-GE3

Product Overview

Category: Integrated Circuit
Use: Power MOSFET
Characteristics: High efficiency, low on-resistance
Package: SO-8
Essence: Power management
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Input Capacitance (Ciss) @ Vds: 3000pF @ 15V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

_____ D |1 8| S r | | o a G | | u i | | r n | | c - | | e S |_______| D

Functional Features

• Low gate charge
• Fast switching speed
• Enhanced power dissipation capability

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Compact package size

Disadvantages: - Limited voltage range - Sensitivity to overvoltage conditions

Working Principles

The SI4411DY-T1-GE3 is a power MOSFET designed to efficiently switch high currents with minimal power loss. It operates by controlling the flow of current between the drain and source terminals using the gate voltage.

Detailed Application Field Plans

1. DC-DC Converters: Utilized in step-down converters for efficient power management.
2. Motor Control: Enables precise control of motor speed and direction in various applications.
3. Battery Management: Used in battery protection circuits to regulate charging and discharging.

Detailed and Complete Alternative Models

1. SI4411DY-T1-E3: Similar specifications with alternate packaging options.
2. SI4412DY-T1-GE3: Higher voltage rating with comparable performance characteristics.

This comprehensive entry provides an in-depth understanding of the SI4411DY-T1-GE3, covering its specifications, features, applications, and alternatives within the integrated circuit category.