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SI2301CDS-T1-E3

SI2301CDS-T1-E3

Product Overview

Category

The SI2301CDS-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic circuits and applications that require switching or amplifying signals.

Characteristics

  • Low on-resistance
  • High-speed switching
  • Low gate charge
  • Small package size

Package

The SI2301CDS-T1-E3 is typically available in a small SOT-23 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.6A
  • Rds(on) (Max) @ Vgs: 100mΩ @ 4.5V
  • Gate-Source Voltage (Vgs): ±8V
  • Power Dissipation (Pd): 1.25W

Detailed Pin Configuration

The SI2301CDS-T1-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed
  • Low power consumption
  • High efficiency
  • Reliable performance under varying conditions

Advantages

  • Small form factor
  • Low on-resistance
  • Suitable for low-voltage applications
  • Cost-effective solution for power management

Disadvantages

  • Limited maximum voltage and current ratings
  • Sensitivity to static discharge
  • May require additional protection circuitry in certain applications

Working Principles

The SI2301CDS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch and regulate power within a circuit.

Detailed Application Field Plans

The SI2301CDS-T1-E3 is widely used in: - Battery management systems - Portable electronic devices - LED lighting control - DC-DC converters - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2301CDS-T1-E3 include: - SI2301BDS-T1-GE3 - SI2301DDS-T1-GE3 - SI2301EDS-T1-GE3

In conclusion, the SI2301CDS-T1-E3 power MOSFET offers a compact and efficient solution for power management in various electronic applications, despite its limitations in voltage and current handling. Its fast switching speed and low on-resistance make it suitable for low-power and space-constrained designs.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI2301CDS-T1-E3 i tekniska lösningar

  1. What is the maximum drain-source voltage of SI2301CDS-T1-E3?

    • The maximum drain-source voltage of SI2301CDS-T1-E3 is 20V.
  2. What is the continuous drain current of SI2301CDS-T1-E3?

    • The continuous drain current of SI2301CDS-T1-E3 is 2.3A.
  3. What is the on-resistance of SI2301CDS-T1-E3?

    • The on-resistance of SI2301CDS-T1-E3 is typically 100mΩ at Vgs=4.5V.
  4. What is the gate threshold voltage of SI2301CDS-T1-E3?

    • The gate threshold voltage of SI2301CDS-T1-E3 is typically 0.6V to 1.3V.
  5. Can SI2301CDS-T1-E3 be used in low-power applications?

    • Yes, SI2301CDS-T1-E3 can be used in low-power applications due to its low on-resistance and low gate threshold voltage.
  6. Is SI2301CDS-T1-E3 suitable for battery-powered devices?

    • Yes, SI2301CDS-T1-E3 is suitable for battery-powered devices due to its low on-resistance and low power consumption.
  7. What are the typical applications of SI2301CDS-T1-E3?

    • Typical applications of SI2301CDS-T1-E3 include load switching, power management, and battery protection in portable electronics.
  8. Does SI2301CDS-T1-E3 require a heat sink for operation?

    • No, SI2301CDS-T1-E3 does not require a heat sink for normal operation due to its low on-resistance and power dissipation.
  9. What is the operating temperature range of SI2301CDS-T1-E3?

    • The operating temperature range of SI2301CDS-T1-E3 is typically -55°C to 150°C.
  10. Is SI2301CDS-T1-E3 RoHS compliant?

    • Yes, SI2301CDS-T1-E3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.