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SI1403BDL-T1-E3

SI1403BDL-T1-E3

Product Overview

Category

The SI1403BDL-T1-E3 belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications, including power supplies, motor control, and lighting.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate charge
  • Enhanced thermal performance

Package

The SI1403BDL-T1-E3 is available in a small outline package (SOP-8) for surface mount applications.

Essence

The essence of this product lies in its ability to efficiently control and manage power in electronic circuits with minimal losses.

Packaging/Quantity

The SI1403BDL-T1-E3 is typically packaged in reels containing 3000 units.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.3A
  • On-Resistance (RDS(on)): 25mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 7.5nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI1403BDL-T1-E3 features the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. Not Connected (NC) 5. Not Connected (NC) 6. Source (S) 7. Drain (D) 8. Gate (G)

Functional Features

  • Low on-resistance minimizes power losses
  • Fast switching speed enables efficient operation
  • Enhanced thermal performance ensures reliability in high-power applications

Advantages

  • High efficiency in power management
  • Compact package suitable for space-constrained designs
  • Wide operating temperature range for versatile use

Disadvantages

  • Limited maximum drain-source voltage compared to some alternatives
  • May require additional circuitry for overvoltage protection in certain applications

Working Principles

The SI1403BDL-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of applications, including: - Power supply units - Motor control systems - LED lighting drivers - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI1403BDL-T1-E3 include: - SI2303BDS-T1-GE3 - SI2319DS-T1-GE3 - SI2333DDS-T1-GE3

In conclusion, the SI1403BDL-T1-E3 power MOSFET offers efficient power management capabilities in a compact package, making it suitable for various electronic applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SI1403BDL-T1-E3 i tekniska lösningar

  1. What is the maximum voltage rating for SI1403BDL-T1-E3?

    • The maximum voltage rating for SI1403BDL-T1-E3 is typically 30V.
  2. What is the typical on-state resistance of SI1403BDL-T1-E3?

    • The typical on-state resistance of SI1403BDL-T1-E3 is around 20mΩ.
  3. Can SI1403BDL-T1-E3 be used in automotive applications?

    • Yes, SI1403BDL-T1-E3 is suitable for automotive applications.
  4. What is the maximum continuous drain current for SI1403BDL-T1-E3?

    • The maximum continuous drain current for SI1403BDL-T1-E3 is typically 6A.
  5. Does SI1403BDL-T1-E3 have overcurrent protection?

    • No, SI1403BDL-T1-E3 does not have built-in overcurrent protection.
  6. Is SI1403BDL-T1-E3 RoHS compliant?

    • Yes, SI1403BDL-T1-E3 is RoHS compliant.
  7. What is the operating temperature range for SI1403BDL-T1-E3?

    • The operating temperature range for SI1403BDL-T1-E3 is typically -55°C to 150°C.
  8. Can SI1403BDL-T1-E3 be used in battery management systems?

    • Yes, SI1403BDL-T1-E3 can be used in battery management systems.
  9. Does SI1403BDL-T1-E3 require a heat sink for high-power applications?

    • It is recommended to use a heat sink for high-power applications with SI1403BDL-T1-E3.
  10. What is the typical gate threshold voltage for SI1403BDL-T1-E3?

    • The typical gate threshold voltage for SI1403BDL-T1-E3 is around 1V.