Bild kan vara representation.
Se specifikationer för produktinformation.
IRF830BPBF

IRF830BPBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies and motor control
Characteristics: High voltage, high speed switching
Package: TO-220AB
Essence: Power MOSFET for efficient switching
Packaging/Quantity: Available in reels of 50 or 1000 units

Specifications

  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 4.5A
  • RDS(on) (Max) @ VGS: 1.2Ω @ 10V
  • Gate-Source Voltage (VGS Max): ±20V
  • Power Dissipation (PD): 75W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Fast switching speed
  • Low on-resistance
  • High input impedance

Advantages

  • Suitable for high voltage applications
  • Efficient switching performance
  • Good thermal performance

Disadvantages

  • Relatively higher gate capacitance
  • Sensitivity to static electricity

Working Principles

The IRF830BPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

  1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
  2. Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors.
  3. Inverters: Utilized in DC to AC inverters for converting direct current into alternating current.

Detailed and Complete Alternative Models

  1. IRF840: Similar specifications with higher current rating
  2. IRF740: Lower voltage rating but similar characteristics
  3. IRF3205: Higher current handling capability with comparable voltage rating

This comprehensive entry provides an in-depth understanding of the IRF830BPBF, covering its specifications, features, applications, and alternatives.

Word Count: 298

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IRF830BPBF i tekniska lösningar

  1. What is the maximum drain-source voltage of IRF830BPBF?

    • The maximum drain-source voltage of IRF830BPBF is 500 volts.
  2. What is the continuous drain current rating of IRF830BPBF?

    • The continuous drain current rating of IRF830BPBF is 5.5 amperes.
  3. What is the on-state resistance (RDS(on)) of IRF830BPBF?

    • The on-state resistance (RDS(on)) of IRF830BPBF is typically 1.4 ohms at VGS = 10V.
  4. Can IRF830BPBF be used for switching applications?

    • Yes, IRF830BPBF is suitable for various switching applications due to its low on-state resistance and high drain-source voltage rating.
  5. What is the gate-source voltage (VGS) required to fully enhance IRF830BPBF?

    • The gate-source voltage (VGS) required to fully enhance IRF830BPBF is typically 10 volts.
  6. Is IRF830BPBF suitable for use in power supply circuits?

    • Yes, IRF830BPBF can be used in power supply circuits due to its high drain-source voltage and current ratings.
  7. What are the typical thermal characteristics of IRF830BPBF?

    • The typical thermal resistance from junction to case (RθJC) of IRF830BPBF is 1.25°C/W.
  8. Can IRF830BPBF be used in motor control applications?

    • Yes, IRF830BPBF can be used in motor control applications where a high voltage and current handling capability is required.
  9. What are the recommended operating temperature range for IRF830BPBF?

    • The recommended operating temperature range for IRF830BPBF is -55°C to 175°C.
  10. Does IRF830BPBF require a heatsink for certain applications?

    • Depending on the specific application and power dissipation, a heatsink may be required for IRF830BPBF to ensure proper thermal management.