Category: Power Semiconductor
Use: High-power switching applications
Characteristics: Fast switching, high voltage capability
Package: TO-264
Essence: Silicon Carbide (SiC) Schottky diode
Packaging/Quantity: Single diode
The VS-VSKT162/16PBF features a standard TO-264 package with three pins: Anode, Cathode, and Gate.
The VS-VSKT162/16PBF operates based on the Schottky barrier principle, utilizing the unique properties of silicon carbide to enable fast switching and low forward voltage drop.
This diode is suitable for various high-power applications, including: - Power supplies - Motor drives - Renewable energy systems - Electric vehicles
Note: The above alternative models offer similar specifications and functionality.
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What is the maximum voltage rating of the VS-VSKT162/16PBF module?
What is the current rating of the VS-VSKT162/16PBF module?
What type of applications is the VS-VSKT162/16PBF module suitable for?
Does the VS-VSKT162/16PBF module have built-in protection features?
What is the typical switching frequency of the VS-VSKT162/16PBF module?
Can the VS-VSKT162/16PBF module be used in parallel configurations for higher power applications?
What are the recommended cooling methods for the VS-VSKT162/16PBF module?
Is the VS-VSKT162/16PBF module suitable for both single-phase and three-phase applications?
What are the typical efficiency ratings of the VS-VSKT162/16PBF module?
Are there any specific control interface requirements for integrating the VS-VSKT162/16PBF module into a system?