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BU1008-E3/51

BU1008-E3/51

Product Overview

Category: Electronic Component
Use: Power Transistor
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: NPN Bipolar Power Transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Collector-Emitter Voltage (VCEO): 450V
  • Collector Current (IC): 12A
  • Total Power Dissipation (PT): 80W
  • Transition Frequency (fT): 4MHz
  • Package Type: TO-220AB

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • High current capability
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages: - Suitable for high power applications - Fast switching speed - Low saturation voltage

Disadvantages: - May require heat sink for high power applications - Sensitive to overvoltage conditions

Working Principles

BU1008-E3/51 is an NPN bipolar power transistor designed to amplify and switch electronic signals. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals.

Detailed Application Field Plans

This power transistor is commonly used in high-power applications such as power supplies, motor control, and audio amplifiers. It is also suitable for electronic ballasts and electronic ignition systems.

Detailed and Complete Alternative Models

  • BU1008-E3/52
  • BU1008-E3/53
  • BU1008-E3/54

Note: The alternative models listed above have similar specifications and can be used as substitutes for BU1008-E3/51.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BU1008-E3/51 i tekniska lösningar

  1. What is BU1008-E3/51?

    • BU1008-E3/51 is a high-power NPN silicon transistor commonly used in electronic circuits for amplification and switching applications.
  2. What are the typical applications of BU1008-E3/51?

    • BU1008-E3/51 is commonly used in power supply circuits, audio amplifiers, motor control circuits, and other high-power electronic applications.
  3. What is the maximum voltage and current ratings for BU1008-E3/51?

    • The maximum collector-emitter voltage (Vce) for BU1008-E3/51 is typically around 150V, and the maximum collector current (Ic) is around 12A.
  4. How do I determine the appropriate heat sink for BU1008-E3/51?

    • The appropriate heat sink for BU1008-E3/51 can be determined based on the maximum power dissipation and thermal resistance of the transistor, as well as the operating conditions of the circuit.
  5. What are the key parameters to consider when designing a circuit with BU1008-E3/51?

    • Key parameters to consider include the maximum voltage and current ratings, power dissipation, gain bandwidth product, and safe operating area of the transistor.
  6. Can BU1008-E3/51 be used in high-frequency applications?

    • BU1008-E3/51 is not typically recommended for high-frequency applications due to its lower gain bandwidth product and slower switching speeds compared to specialized high-frequency transistors.
  7. Are there any common failure modes associated with BU1008-E3/51?

    • Common failure modes include thermal runaway due to inadequate heat sinking, overvoltage or overcurrent conditions leading to breakdown, and excessive junction temperature causing degradation.
  8. What are the best practices for soldering BU1008-E3/51 onto a PCB?

    • Best practices include using proper soldering techniques, avoiding excessive heat that could damage the transistor, and ensuring good thermal contact with the PCB for heat dissipation.
  9. Can BU1008-E3/51 be used in automotive applications?

    • BU1008-E3/51 can be used in automotive applications, but it's important to ensure that it meets the necessary automotive-grade specifications and reliability requirements.
  10. Where can I find detailed technical specifications and application notes for BU1008-E3/51?

    • Detailed technical specifications and application notes for BU1008-E3/51 can be found in the datasheet provided by the manufacturer, as well as in relevant technical literature and application guides.