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2SA1721OTE85LF
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2SA1721OTE85LF

Product Overview

Category

The 2SA1721OTE85LF belongs to the category of semiconductor devices.

Use

It is commonly used as a high-voltage, high-speed switching transistor in electronic circuits.

Characteristics

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage

Package

The 2SA1721OTE85LF is typically available in a small package such as SOT-89 or similar, making it suitable for compact circuit designs.

Essence

This transistor is essential for amplifying and switching electronic signals in various applications.

Packaging/Quantity

It is usually supplied in reels or tubes containing a specific quantity, such as 3000 units per reel.

Specifications

  • Collector-Base Voltage (VCBO): [specification]
  • Collector-Emitter Voltage (VCEO): [specification]
  • Emitter-Base Voltage (VEBO): [specification]
  • Collector Current (IC): [specification]
  • Power Dissipation (PD): [specification]
  • Transition Frequency (fT): [specification]

Detailed Pin Configuration

The 2SA1721OTE85LF typically has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in power supply circuits.
  • Fast switching speed enables efficient signal processing.
  • Low saturation voltage minimizes power loss during operation.

Advantages

  • Suitable for high-voltage applications
  • Fast response time
  • Low power dissipation

Disadvantages

  • May require careful handling due to its small size
  • Sensitivity to overvoltage conditions

Working Principles

The 2SA1721OTE85LF operates based on the principles of bipolar junction transistors, where controlled current flow between its terminals enables signal amplification and switching.

Detailed Application Field Plans

Power Supply Circuits

The transistor can be used in power supply circuits to regulate and control high voltages efficiently.

Audio Amplifiers

Due to its fast switching speed, it is suitable for use in audio amplifiers to enhance signal fidelity.

Switching Circuits

Its high voltage capability and fast response make it ideal for use in switching circuits for various electronic devices.

Detailed and Complete Alternative Models

  • 2SC4382
  • 2N5551
  • BC547
  • MJE13005

In conclusion, the 2SA1721OTE85LF is a versatile semiconductor device with high-voltage capabilities, fast switching speed, and low saturation voltage, making it suitable for a wide range of electronic applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av 2SA1721OTE85LF i tekniska lösningar

  1. What is the maximum collector current of 2SA1721OTE85LF?

    • The maximum collector current of 2SA1721OTE85LF is 3A.

  2. What is the maximum collector-emitter voltage of 2SA1721OTE85LF?

    • The maximum collector-emitter voltage of 2SA1721OTE85LF is 50V.

  3. What is the power dissipation of 2SA1721OTE85LF?

    • The power dissipation of 2SA1721OTE85LF is 1.5W.

  4. What are the typical applications of 2SA1721OTE85LF?

    • Typical applications include audio amplification, switching circuits, and general purpose amplification.

  5. What is the gain (hFE) range of 2SA1721OTE85LF?

    • The gain (hFE) range of 2SA1721OTE85LF is 60-320.

  6. Is 2SA1721OTE85LF suitable for high-frequency applications?

    • No, it is not recommended for high-frequency applications due to its limited frequency response.

  7. What are the recommended operating temperature and storage temperature for 2SA1721OTE85LF?

    • The recommended operating temperature is -55°C to 150°C, and the storage temperature is -55°C to 150°C.

  8. Does 2SA1721OTE85LF require a heat sink for certain applications?

    • Yes, for applications where the power dissipation approaches the maximum rating, a heat sink may be necessary.

  9. Can 2SA1721OTE85LF be used in push-pull amplifier configurations?

    • Yes, it can be used in push-pull amplifier configurations with appropriate circuit design.

  10. What are the key differences between 2SA1721OTE85LF and similar transistors in its class?

    • The main differences lie in the maximum ratings, gain characteristics, and frequency response, which should be considered when selecting the transistor for specific technical solutions.