STMicroelectronics
Bild kan vara representation.
Se specifikationer för produktinformation.
STWA70N60DM6
Visa detalj Datablad

STWA70N60DM6

Introduction

The STWA70N60DM6 is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power switching applications
  • Characteristics: High voltage, low on-resistance, high current capability
  • Package: TO-247
  • Essence: Efficient power management
  • Packaging/Quantity: Typically sold in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 70A
  • On-Resistance: 0.06 ohms
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STWA70N60DM6 features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive power required

Advantages and Disadvantages

Advantages: - Efficient power management - Suitable for high-power applications - Low conduction losses

Disadvantages: - Higher cost compared to lower-rated MOSFETs - Requires careful thermal management in high-power applications

Working Principles

The STWA70N60DM6 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The STWA70N60DM6 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control - Inverters - Industrial power systems - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the STWA70N60DM6 include: - STP80NF55-06 - IRFP4668 - FDPF33N25T

In conclusion, the STWA70N60DM6 is a high-performance power MOSFET suitable for a wide range of power switching applications, offering efficient power management and high reliability.

Word count: 311

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av STWA70N60DM6 i tekniska lösningar

  1. What is the maximum drain-source voltage of STWA70N60DM6?

    • The maximum drain-source voltage of STWA70N60DM6 is 600V.

  2. What is the continuous drain current rating of STWA70N60DM6?

    • The continuous drain current rating of STWA70N60DM6 is 70A.

  3. What is the on-state resistance (RDS(on)) of STWA70N60DM6?

    • The on-state resistance (RDS(on)) of STWA70N60DM6 is typically 0.06 ohms.

  4. What is the gate threshold voltage of STWA70N60DM6?

    • The gate threshold voltage of STWA70N60DM6 is typically 3V.

  5. What are the typical applications for STWA70N60DM6?

    • STWA70N60DM6 is commonly used in applications such as motor control, power supplies, and inverters.

  6. What is the operating temperature range of STWA70N60DM6?

    • The operating temperature range of STWA70N60DM6 is -55°C to 150°C.

  7. Does STWA70N60DM6 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of STWA70N60DM6.

  8. Is STWA70N60DM6 suitable for high-frequency switching applications?

    • Yes, STWA70N60DM6 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.

  9. What is the gate charge of STWA70N60DM6?

    • The gate charge of STWA70N60DM6 is typically 110nC.

  10. Are there any recommended driver ICs for driving STWA70N60DM6?

    • Recommended driver ICs for driving STWA70N60DM6 include those with suitable drive strength and voltage compatibility, such as IR2110 or similar devices.