STW65N60DM6
Product Overview
Category
The STW65N60DM6 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage, fast-switching N-channel enhancement-mode power MOSFET.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
- Avalanche energy specified
Package
The STW65N60DM6 is typically available in a TO-247 package.
Essence
The essence of the STW65N60DM6 lies in its ability to efficiently handle high voltage and fast switching applications.
Packaging/Quantity
It is commonly packaged in tubes or reels with varying quantities based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 65A
- On-Resistance (RDS(on)): 0.065Ω
- Total Gate Charge (Qg): 70nC
- Threshold Voltage (VGS(th)): 2-4V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STW65N60DM6 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability for power applications
- Fast switching speed for efficient operation
- Low on-resistance for reduced power dissipation
- Avalanche energy specified for ruggedness
Advantages
- Suitable for high-voltage applications
- Fast switching speed improves efficiency
- Low on-resistance reduces power loss
- Rugged design with specified avalanche energy
Disadvantages
- May require careful handling due to high voltage capability
- Higher gate charge compared to some alternative models
Working Principles
The STW65N60DM6 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.
Detailed Application Field Plans
The STW65N60DM6 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Solar inverters - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the STW65N60DM6 include: - IRFP460 - FDPF33N25 - IXFN38N100
In conclusion, the STW65N60DM6 power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for various power applications such as switched-mode power supplies, motor control, and inverters.
[Word count: 366]
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av STW65N60DM6 i tekniska lösningar
What is the maximum voltage rating of STW65N60DM6?
- The maximum voltage rating of STW65N60DM6 is 600V.
What is the maximum continuous drain current of STW65N60DM6?
- The maximum continuous drain current of STW65N60DM6 is 65A.
What is the on-resistance (RDS(on)) of STW65N60DM6?
- The on-resistance (RDS(on)) of STW65N60DM6 is typically 0.065 ohms.
What is the gate threshold voltage of STW65N60DM6?
- The gate threshold voltage of STW65N60DM6 is typically 3V.
What are the typical applications for STW65N60DM6?
- STW65N60DM6 is commonly used in applications such as motor control, power supplies, and inverters.
What is the operating temperature range of STW65N60DM6?
- The operating temperature range of STW65N60DM6 is -55°C to 150°C.
Does STW65N60DM6 have built-in protection features?
- Yes, STW65N60DM6 has built-in protection features such as overcurrent protection and thermal shutdown.
Is STW65N60DM6 suitable for high-frequency switching applications?
- Yes, STW65N60DM6 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
What package type is STW65N60DM6 available in?
- STW65N60DM6 is available in a TO-247 package.
Are there any recommended thermal management considerations for using STW65N60DM6?
- It is recommended to use proper heat sinking and thermal management techniques to ensure optimal performance and reliability of STW65N60DM6 in high-power applications.