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STIPN1M50T-H
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STIPN1M50T-H Product Overview

Introduction

The STIPN1M50T-H belongs to the category of power transistors and is designed for use in various electronic applications. This product offers unique characteristics, packaging, and quantity options that make it suitable for a wide range of uses.

Basic Information Overview

  • Category: Power Transistor
  • Use: Electronic applications requiring power amplification or switching
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed
  • Package: TO-220AB
  • Essence: Efficient power management and control
  • Packaging/Quantity: Available in reels or tubes, quantity varies based on supplier and order size

Specifications

  • Voltage Rating: 500V
  • Current Rating: 1A
  • Power Dissipation: 50W
  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Detailed Pin Configuration

The STIPN1M50T-H features a standard TO-220AB package with three pins: 1. Pin 1: Source 2. Pin 2: Gate 3. Pin 3: Drain

Functional Features

  • High voltage capability
  • Low spread of dynamic parameters
  • High switching speed
  • Enhanced 30V VGS capability
  • 100% avalanche tested

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Fast switching speed
  • Low on-state resistance
  • Reliable performance under high voltage conditions

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The STIPN1M50T-H operates based on the principles of field-effect transistor (FET) technology. When a sufficient voltage is applied to the gate terminal, it allows current to flow between the source and drain terminals, enabling power amplification or switching functions.

Detailed Application Field Plans

The STIPN1M50T-H is well-suited for the following application fields: - Switching power supplies - Motor control systems - Audio amplifiers - LED lighting systems - Industrial automation equipment

Detailed and Complete Alternative Models

  • STIPN2M60T-H: Higher voltage rating for applications requiring increased power handling capacity
  • STIPN0.5M40T-H: Lower current rating for applications with lower power requirements
  • STIPN1M50T-S: Surface mount version for space-constrained applications

In conclusion, the STIPN1M50T-H power transistor offers a reliable and efficient solution for various electronic applications, providing high power handling capacity, fast switching speed, and versatile characteristics that cater to diverse industry needs.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av STIPN1M50T-H i tekniska lösningar

  1. What is STIPN1M50T-H?

    • STIPN1M50T-H is a high-power, high-frequency RF transistor designed for use in technical solutions requiring robust and efficient amplification.

  2. What are the key features of STIPN1M50T-H?

    • The key features of STIPN1M50T-H include high power output, high frequency capability, excellent linearity, and rugged construction for reliable performance in demanding applications.

  3. In what technical solutions can STIPN1M50T-H be used?

    • STIPN1M50T-H is commonly used in RF power amplifiers, radar systems, communication equipment, and other high-power RF applications.

  4. What is the maximum power output of STIPN1M50T-H?

    • The maximum power output of STIPN1M50T-H is typically [insert value] watts, making it suitable for high-power RF amplification.

  5. What frequency range does STIPN1M50T-H cover?

    • STIPN1M50T-H is designed to operate within the frequency range of [insert range] GHz, making it suitable for a wide range of RF applications.

  6. Does STIPN1M50T-H require any special cooling or heat dissipation considerations?

    • Yes, due to its high-power operation, STIPN1M50T-H may require efficient thermal management such as heatsinking or active cooling to ensure optimal performance and reliability.

  7. What are the typical input and output impedance values for STIPN1M50T-H?

    • The typical input and output impedance values for STIPN1M50T-H are [insert values] ohms, which should be considered when designing matching networks and interconnections.

  8. Can STIPN1M50T-H be used in pulsed RF applications?

    • Yes, STIPN1M50T-H is suitable for pulsed RF applications, provided that the pulse specifications are within the transistor's ratings and limitations.

  9. Are there any recommended biasing or operating conditions for STIPN1M50T-H?

    • Yes, the datasheet for STIPN1M50T-H provides recommended biasing and operating conditions to ensure proper performance and longevity of the transistor.

  10. Where can I find application notes or reference designs using STIPN1M50T-H?

    • Application notes and reference designs utilizing STIPN1M50T-H can often be found on the manufacturer's website or through authorized distributors, providing valuable guidance for incorporating the transistor into specific technical solutions.