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MJE182
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MJE182 Transistor

Product Overview

The MJE182 transistor is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It falls under the category of discrete semiconductor devices and is commonly used in electronic circuits for its high current and voltage capabilities.

Basic Information Overview

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching
  • Characteristics: High Power, NPN Type
  • Package: TO-220
  • Essence: High Current and Voltage Handling
  • Packaging/Quantity: Typically available in reels or tubes containing 50 to 100 units

Specifications

  • Collector-Base Voltage (VCBO): 400V
  • Collector-Emitter Voltage (VCEO): 400V
  • Emitter-Base Voltage (VEBO): 9V
  • Collector Current (IC): 8A
  • Power Dissipation (Pd): 80W
  • Transition Frequency (ft): 2MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The MJE182 transistor has three pins: 1. Collector (C): Connected to the positive supply voltage in most applications. 2. Base (B): Controls the flow of current between the collector and emitter. 3. Emitter (E): Connected to the ground or common reference point.

Functional Features

  • High Collector-Emitter Breakdown Voltage
  • Low Saturation Voltage
  • Fast Switching Speed
  • Good Linearity in Amplification Applications

Advantages and Disadvantages

Advantages

  • High Power Handling Capability
  • Suitable for High-Frequency Applications
  • Low Saturation Voltage

Disadvantages

  • Relatively Large Package Size
  • Limited Operating Temperature Range

Working Principles

The MJE182 operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. In amplification applications, small changes in the base current result in larger changes in the collector current, enabling signal amplification. In switching applications, the transistor can rapidly switch between on and off states, allowing or blocking the flow of current through a circuit.

Detailed Application Field Plans

The MJE182 transistor finds extensive use in the following applications: - Audio Amplifiers - Power Supplies - Motor Control Circuits - RF Amplifiers - Electronic Ballasts

Detailed and Complete Alternative Models

  • MJE180
  • MJE181
  • MJE183
  • MJE184

In conclusion, the MJE182 transistor offers high power handling and versatile applications in amplification and switching circuits, making it a valuable component in various electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MJE182 i tekniska lösningar

  1. What is MJE182?

    • MJE182 is a high-voltage, high-speed NPN transistor commonly used in electronic circuits for amplification and switching applications.

  2. What are the typical applications of MJE182?

    • MJE182 is often used in audio amplifiers, power supplies, motor control circuits, and other high-voltage switching applications.

  3. What are the key specifications of MJE182?

    • The MJE182 transistor typically has a maximum collector-emitter voltage of 250V, a maximum collector current of 3A, and a maximum power dissipation of 50W.

  4. How do I properly bias MJE182 in my circuit?

    • Proper biasing of MJE182 involves setting the base current to a level that allows the transistor to operate within its specified parameters. This can be achieved using appropriate resistors and voltage sources in the circuit.

  5. Can MJE182 be used in high-frequency applications?

    • While MJE182 is not specifically designed for high-frequency applications, it can still be used in moderate frequency ranges with proper circuit design and layout considerations.

  6. What are the common pitfalls when using MJE182 in a circuit?

    • Common pitfalls include inadequate heat sinking, improper biasing, exceeding maximum ratings, and insufficient consideration of transient effects.

  7. How do I calculate the power dissipation in MJE182?

    • The power dissipation can be calculated using the formula P = Vce * Ic, where Vce is the collector-emitter voltage and Ic is the collector current.

  8. Are there any recommended alternatives to MJE182?

    • Some alternatives to MJE182 include MJE180, MJE181, and MJE183, which have similar characteristics and can be used as substitutes in certain applications.

  9. What are the thermal considerations when using MJE182?

    • Proper heat sinking and thermal management are crucial when using MJE182, especially in high-power or continuous operation applications, to ensure the transistor operates within its temperature limits.

  10. Where can I find detailed application notes for using MJE182 in technical solutions?

    • Detailed application notes for MJE182 can often be found in the manufacturer's datasheet, as well as in technical reference books and online resources related to transistor applications.