M48Z12-200PC1

Product Overview

Category

M48Z12-200PC1 belongs to the category of non-volatile static random access memory (NVSRAM).

Use

The M48Z12-200PC1 is primarily used as a backup memory device in applications where data retention is crucial during power loss or system shutdown.

Characteristics

• Non-volatile: The M48Z12-200PC1 retains data even when power is disconnected.
• Static RAM: It provides fast read and write access times.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• High density: The M48Z12-200PC1 offers a large storage capacity.

Package

The M48Z12-200PC1 comes in a 28-pin plastic DIP (Dual Inline Package) with a ceramic lid.

Essence

The essence of the M48Z12-200PC1 lies in its ability to provide non-volatile memory storage with fast access times, making it ideal for critical data backup applications.

Packaging/Quantity

The M48Z12-200PC1 is typically packaged in tubes or trays, with a quantity of 25 units per tube/tray.

Specifications

• Memory Size: 2 kilobits (256 x 8)
• Supply Voltage: 4.5V to 5.5V
• Access Time: 200 nanoseconds
• Standby Current: 100 microamps (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M48Z12-200PC1 has the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A7)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. 5V Power Supply (VCC)
8. Not Connected (NC) 9-28. Address Inputs (A8-A17)

Functional Features

• Battery Backup: The M48Z12-200PC1 includes an integrated lithium energy source that ensures data retention during power loss.
• Automatic Switchover: The device seamlessly switches between the battery backup and the main power supply, ensuring uninterrupted operation.
• Write Protection: The M48Z12-200PC1 offers write protection to prevent accidental modification of stored data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention during power loss.
• Fast access times for efficient read and write operations.
• Low power consumption extends battery life in portable devices.
• High storage capacity accommodates large amounts of critical data.

Disadvantages

• Limited memory size compared to other storage technologies.
• Relatively higher cost per kilobit compared to traditional RAM.

Working Principles

The M48Z12-200PC1 combines the benefits of static random access memory (SRAM) and non-volatile memory technology. It utilizes a lithium energy source to provide backup power, allowing it to retain data even when the main power supply is disconnected. The device operates as a standard SRAM during normal conditions, providing fast read and write access. When power loss occurs, the M48Z12-200PC1 automatically switches to the backup power source, ensuring data integrity.

Detailed Application Field Plans

The M48Z12-200PC1 finds applications in various fields, including:

1. Embedded Systems: Used as a backup memory in microcontrollers and industrial control systems.
2. Communication Equipment: Provides data retention in networking devices, routers, and switches.
3. Medical Devices: Ensures critical patient data is preserved during power interruptions.
4. Automotive Electronics: Used for storing configuration data and fault codes in automotive control units.
5. Security Systems: Provides backup memory for alarm systems and access control devices.

Detailed and Complete Alternative Models

1. M48Z12-150PC1: Similar to M48Z12-200PC1, but with a 150 nanosecond access time.
2. M48Z12-100PC1: Similar to M48Z12-200PC1, but with a 100 nanosecond access time.
3. M48Z12-80PC1: Similar to M48Z12-200PC1, but with an 80 nanosecond access time.
4. M48Z12-70PC1: Similar to M48Z12-200PC1, but with a 70 nanosecond access time.

These alternative models offer varying access times to suit different application requirements.

In conclusion, the M48Z12-200PC1 is a non-volatile static random access memory device that provides fast access times and data retention during power loss. Its high density and low power consumption