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M48T35Y-70MH1F
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M48T35Y-70MH1F

Product Overview

Category

The M48T35Y-70MH1F belongs to the category of non-volatile static random access memory (NVRAM) chips.

Use

This chip is commonly used for storing critical data in electronic devices that require non-volatile memory, such as computers, industrial control systems, and embedded systems.

Characteristics

  • Non-volatile: The M48T35Y-70MH1F retains stored data even when power is removed.
  • Static RAM: It provides fast read and write access times.
  • High capacity: This chip has a storage capacity of 32 kilobits (4 kilobytes).
  • Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The M48T35Y-70MH1F is available in a compact 28-pin small outline integrated circuit (SOIC) package.

Essence

The essence of the M48T35Y-70MH1F lies in its ability to provide non-volatile memory storage with fast access times, making it ideal for applications where data integrity is crucial.

Packaging/Quantity

This chip is typically sold in reels or tubes containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

  • Supply voltage: 4.5V to 5.5V
  • Operating temperature range: -40°C to +85°C
  • Data retention: Minimum 10 years
  • Access time: 70ns
  • Standby current: Maximum 150μA
  • Write cycle endurance: Minimum 1 million cycles

Detailed Pin Configuration

The M48T35Y-70MH1F features a 28-pin SOIC package with the following pin configuration:

  1. Chip Enable (CE)
  2. Output Enable (OE)
  3. Write Enable (WE)
  4. Address Inputs (A0-A14)
  5. Data Inputs/Outputs (DQ0-DQ7)
  6. Ground (GND)
  7. Not Connected (NC)
  8. Not Connected (NC)
  9. Not Connected (NC)
  10. Not Connected (NC)
  11. Not Connected (NC)
  12. Not Connected (NC)
  13. Not Connected (NC)
  14. Not Connected (NC)
  15. Not Connected (NC)
  16. Not Connected (NC)
  17. Not Connected (NC)
  18. Not Connected (NC)
  19. Not Connected (NC)
  20. Not Connected (NC)
  21. Not Connected (NC)
  22. Not Connected (NC)
  23. Not Connected (NC)
  24. Not Connected (NC)
  25. VCC
  26. Not Connected (NC)
  27. Not Connected (NC)
  28. Not Connected (NC)

Functional Features

  • Non-volatile storage: The M48T35Y-70MH1F retains data even when power is removed, ensuring data integrity.
  • Fast access times: It provides quick read and write operations, allowing for efficient data retrieval and storage.
  • Low power consumption: This chip operates at low power levels, making it suitable for battery-powered devices.
  • High endurance: With a minimum of 1 million write cycles, the M48T35Y-70MH1F offers reliable and durable data storage.

Advantages and Disadvantages

Advantages

  • Non-volatile memory ensures data retention even during power loss.
  • Fast access times enable efficient data retrieval and storage.
  • Low power consumption extends battery life in portable devices.
  • High endurance allows for frequent write operations without compromising reliability.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per kilobyte compared to traditional RAM.
  • Requires additional circuitry for interfacing with the host system.

Working Principles

The M48T35Y-70MH1F combines the advantages of non-volatile memory and static random access memory (SRAM) technology. It utilizes a small onboard battery to provide power during periods of power loss, ensuring data retention. The chip's SRAM component allows for fast read and write operations, providing efficient data access.

Detailed Application Field Plans

The M48T35Y-70MH1F finds applications in various fields, including:

  1. Computers: Used for storing critical system configuration data, such as BIOS settings.
  2. Industrial Control Systems: Provides non-volatile storage for critical control parameters and program data.
  3. Embedded Systems: Enables reliable storage of firmware, calibration data, and device-specific configurations.

Detailed and Complete Alternative Models

  1. M48T35-70PC1: A similar NVRAM chip with a DIP package.
  2. DS1230AB-120+: An alternative NVRAM chip with a 32 kilobit capacity and faster access times.
  3. FM1608-120

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av M48T35Y-70MH1F i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of M48T35Y-70MH1F in technical solutions:

Q1: What is the M48T35Y-70MH1F? A1: The M48T35Y-70MH1F is a non-volatile static RAM (NVSRAM) integrated circuit that combines a 32K x 8 SRAM with a built-in real-time clock/calendar.

Q2: What is the purpose of the M48T35Y-70MH1F in technical solutions? A2: The M48T35Y-70MH1F is commonly used to provide battery-backed non-volatile memory for storing critical data, such as system configuration settings or timekeeping information.

Q3: How does the M48T35Y-70MH1F retain data during power loss? A3: The M48T35Y-70MH1F has an integrated lithium energy source that powers the internal circuitry, allowing it to retain data even when the main power supply is disconnected.

Q4: Can the M48T35Y-70MH1F be used in both industrial and consumer applications? A4: Yes, the M48T35Y-70MH1F is suitable for a wide range of applications, including industrial control systems, medical devices, telecommunications equipment, and consumer electronics.

Q5: What is the operating voltage range of the M48T35Y-70MH1F? A5: The M48T35Y-70MH1F operates within a voltage range of 4.75V to 5.5V.

Q6: Does the M48T35Y-70MH1F support automatic leap year compensation? A6: Yes, the M48T35Y-70MH1F has built-in leap year compensation, which ensures accurate timekeeping even during leap years.

Q7: Can the M48T35Y-70MH1F be easily integrated into existing systems? A7: Yes, the M48T35Y-70MH1F is available in a standard 28-pin DIP package, making it compatible with most microcontrollers and system designs.

Q8: What is the typical data retention period of the M48T35Y-70MH1F? A8: The M48T35Y-70MH1F has a typical data retention period of 10 years, ensuring long-term reliability for critical data storage.

Q9: Does the M48T35Y-70MH1F support battery low detection? A9: Yes, the M48T35Y-70MH1F includes a battery low detection circuit that can be used to monitor the energy source and provide an early warning when the battery voltage drops below a certain threshold.

Q10: Is the M48T35Y-70MH1F resistant to electromagnetic interference (EMI)? A10: Yes, the M48T35Y-70MH1F is designed to be resistant to EMI, ensuring reliable operation in environments with high levels of electromagnetic noise.

Please note that these answers are general and may vary depending on the specific application and implementation of the M48T35Y-70MH1F in a technical solution.