F800BJHEPTTL90

Product Overview

• Category: Electronic Component
• Use: Signal Amplification and Processing
• Characteristics: High Precision, TTL Compatible, Low Power Consumption
• Package: TO-92
• Essence: Bipolar Junction Transistor (BJT)
• Packaging/Quantity: Bulk Packaging, 1000 units per pack

Specifications

• Type: NPN
• Collector Current: 800mA
• Collector-Emitter Voltage: 40V
• Emitter-Base Voltage: 5V
• Power Dissipation: 625mW
• Transition Frequency: 90MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The F800BJHEPTTL90 transistor has three pins:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): This pin controls the flow of current between the collector and emitter.
3. Emitter (E): This pin is connected to the negative terminal of the power supply.

Functional Features

• High gain and low noise characteristics make it suitable for signal amplification applications.
• TTL compatibility allows easy integration with digital circuits.
• Low power consumption ensures energy efficiency.
• Wide operating temperature range enables usage in various environments.

Advantages and Disadvantages

Advantages: - High precision amplification of signals. - Compatibility with TTL logic levels. - Low power consumption for energy-efficient operation.

Disadvantages: - Limited maximum collector current compared to some other transistors. - Restricted voltage handling capability.

Working Principles

The F800BJHEPTTL90 is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This amplification allows the transistor to process and amplify signals effectively.

Detailed Application Field Plans

The F800BJHEPTTL90 transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio amplifiers to boost weak signals from microphones or musical instruments.
2. Switching Circuits: The transistor's TTL compatibility makes it suitable for use in digital switching circuits.
3. Oscillators: It can be utilized in oscillator circuits to generate stable frequencies for communication systems.
4. Sensor Interfaces: The transistor can interface with sensors to amplify and process their output signals.

Detailed and Complete Alternative Models

1. F600BJHEPTTL80

   • Collector Current: 600mA
   • Collector-Emitter Voltage: 40V
   • Emitter-Base Voltage: 5V
   • Power Dissipation: 500mW
   • Transition Frequency: 80MHz

2. F1000BJHEPTTL100

   • Collector Current: 1000mA
   • Collector-Emitter Voltage: 40V
   • Emitter-Base Voltage: 5V
   • Power Dissipation: 750mW
   • Transition Frequency: 100MHz

3. F1200BJHEPTTL110

   • Collector Current: 1200mA
   • Collector-Emitter Voltage: 40V
   • Emitter-Base Voltage: 5V
   • Power Dissipation: 875mW
   • Transition Frequency: 110MHz

(Note: These alternative models are provided as examples and may not cover all available options.)

This completes the encyclopedia entry for the F800BJHEPTTL90 transistor.