BD1LB500EFJ-CE2

Product Overview

Category: Electronic Component
Use: Power Amplifier
Characteristics: High power output, low distortion
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Model Number: BD1LB500EFJ-CE2
• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current: 5A
• Collector-Emitter Voltage: 50V
• Power Dissipation: 1.5W
• Operating Frequency: 1MHz - 100MHz
• Gain Bandwidth Product: 300MHz
• Package Type: SOT-89
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The BD1LB500EFJ-CE2 transistor has three pins:

1. Base (B): This pin is used to control the flow of current through the transistor.
2. Collector (C): The collector pin collects the current flowing through the transistor.
3. Emitter (E): The emitter pin emits the current collected by the collector.

Functional Features

• High power output: The BD1LB500EFJ-CE2 transistor is capable of delivering high power output, making it suitable for applications that require amplification of signals.
• Low distortion: It exhibits low distortion characteristics, ensuring accurate signal reproduction.
• Wide operating frequency range: With an operating frequency range of 1MHz to 100MHz, it can be used in various applications requiring different frequency ranges.
• Fast switching speed: The transistor offers fast switching speed, enabling quick response times in applications.

Advantages and Disadvantages

Advantages: - High power output capability - Low distortion for accurate signal reproduction - Wide operating frequency range - Fast switching speed

Disadvantages: - Limited maximum collector current (5A) - Restricted collector-emitter voltage (50V)

Working Principles

The BD1LB500EFJ-CE2 transistor operates based on the principles of bipolar junction transistors. It consists of three layers - the emitter, base, and collector. By applying a small current or voltage to the base pin, the transistor allows a larger current to flow from the collector to the emitter. This amplification property makes it suitable for power amplifier applications.

Detailed Application Field Plans

The BD1LB500EFJ-CE2 transistor finds applications in various fields, including:

1. Audio Amplifiers: Due to its high power output and low distortion characteristics, it is commonly used in audio amplifiers to enhance sound signals.
2. RF Amplifiers: The wide operating frequency range and fast switching speed make it suitable for radio frequency (RF) amplification applications.
3. Power Supplies: It can be utilized in power supply circuits to regulate and amplify electrical signals.
4. Communication Systems: The transistor is employed in communication systems for signal amplification and transmission purposes.

Detailed and Complete Alternative Models

1. BD1LA500EFJ-CE2
2. BD1LC500EFJ-CE2
3. BD1LB600EFJ-CE2
4. BD1LB500EGH-CE2
5. BD1LB500EFJ-CF2

These alternative models offer similar specifications and functionality to the BD1LB500EFJ-CE2 transistor, providing users with options based on their specific requirements.

Word count: 329 words