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UNR521N00L
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UNR521N00L

Product Overview

Belongs to: Integrated Circuits
Category: Power Transistors
Use: Amplification and Switching
Characteristics: High power handling, low voltage drop, compact size
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Tape & Reel, 1000 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): 60V
  • Collector Current (IC): 5A
  • Power Dissipation (PD): 1.25W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Low noise

Advantages

  • Suitable for high-speed switching applications
  • Compact size allows for space-efficient designs
  • Low power dissipation

Disadvantages

  • Limited maximum voltage and current ratings compared to some alternatives
  • Sensitive to overvoltage conditions

Working Principles

The UNR521N00L operates as a bipolar junction transistor (BJT), utilizing the interaction of minority charge carriers in a semiconductor to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, enabling amplification or switching functions.

Detailed Application Field Plans

  1. Audio Amplification: The UNR521N00L can be used in audio amplifier circuits due to its high current gain and low noise characteristics.
  2. Motor Control: Its fast switching speed makes it suitable for motor control applications, such as in small appliances and robotics.
  3. LED Lighting: The transistor's low power dissipation and compact size make it ideal for driving LED lighting systems.

Detailed and Complete Alternative Models

  1. 2N3904: Similar NPN transistor with lower power handling but widely available and cost-effective.
  2. BC547: General-purpose NPN transistor with lower current and voltage ratings but versatile in various applications.
  3. MJE3055: Higher power NPN transistor suitable for more demanding applications but larger in size.

This comprehensive entry provides an in-depth understanding of the UNR521N00L, covering its specifications, features, applications, and alternatives within the integrated circuits category.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av UNR521N00L i tekniska lösningar

  1. What is UNR521N00L?

    • UNR521N00L is a high-speed switching NPN transistor used in various technical solutions.

  2. What are the key features of UNR521N00L?

    • The key features include high-speed switching, low saturation voltage, and high reliability.

  3. What are the typical applications of UNR521N00L?

    • Typical applications include power management, motor control, and general purpose switching.

  4. What is the maximum collector current of UNR521N00L?

    • The maximum collector current is typically 1.5A.

  5. What is the maximum collector-emitter voltage of UNR521N00L?

    • The maximum collector-emitter voltage is typically 160V.

  6. What is the thermal resistance of UNR521N00L?

    • The thermal resistance is typically 125°C/W.

  7. Is UNR521N00L suitable for high-frequency applications?

    • Yes, it is suitable for high-frequency applications due to its high-speed switching capability.

  8. What is the operating temperature range of UNR521N00L?

    • The operating temperature range is typically -55°C to 150°C.

  9. Does UNR521N00L require external protection diodes?

    • Yes, external protection diodes may be required depending on the application and circuit design.

  10. Where can I find the detailed datasheet for UNR521N00L?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.