2SD2216J0L

Product Overview

• Category: Semiconductor
• Use: Power transistor for electronic circuits
• Characteristics: High voltage, high current capability, low saturation voltage
• Package: TO-220AB
• Essence: Power amplification and switching applications
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Voltage Rating: 150V
• Current Rating: 10A
• Power Dissipation: 50W
• Gain Bandwidth Product: 30MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed
• Good linearity of hFE

Advantages

• Suitable for power amplifier and switching circuits
• Wide operating temperature range
• High current handling capability

Disadvantages

• Relatively large package size
• Higher cost compared to smaller transistors

Working Principles

The 2SD2216J0L operates as a bipolar junction transistor (BJT) in common emitter configuration. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

• Audio amplifiers
• Power supply circuits
• Motor control circuits
• Voltage regulators

Detailed and Complete Alternative Models

• 2N3055
• MJ15003
• TIP31C
• BD139

This product belongs to the semiconductor category and is used as a power transistor for electronic circuits. It features high voltage and current capabilities, low saturation voltage, and comes in a TO-220AB package. The 2SD2216J0L is suitable for power amplification and switching applications and is available in bulk packaging with varying quantities. With a voltage rating of 150V, current rating of 10A, and power dissipation of 50W, this transistor offers high performance in various electronic applications. Its detailed pin configuration includes the base, collector, and emitter terminals. The functional features of this transistor include high voltage capability, low collector-emitter saturation voltage, fast switching speed, and good linearity of hFE. While its advantages include suitability for power amplifier and switching circuits, wide operating temperature range, and high current handling capability, it has some disadvantages such as a relatively large package size and higher cost compared to smaller transistors. The working principle of the 2SD2216J0L involves operating as a bipolar junction transistor (BJT) in common emitter configuration, allowing for amplification or switching of electrical signals. This transistor finds application in audio amplifiers, power supply circuits, motor control circuits, and voltage regulators. Additionally, alternative models such as 2N3055, MJ15003, TIP31C, and BD139 can be considered for similar applications.