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NB3F8L3010CMNG
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NB3F8L3010CMNG

Basic Information Overview

  • Category: Electronic Component
  • Use: Signal Amplification and Switching
  • Characteristics: High Gain, Low Noise, Fast Switching Speed
  • Package: SMD (Surface Mount Device)
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications and Parameters

  • Collector Current (IC): 100mA
  • Collector-Emitter Voltage (VCEO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Power Dissipation (PD): 200mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Characteristics

  • High current gain (hFE)
  • Low noise figure
  • Fast switching speed
  • Suitable for low-power applications
  • Wide operating temperature range

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification - Low noise figure ensures minimal distortion - Fast switching speed enables rapid switching between states - Suitable for low-power applications, conserving energy - Wide operating temperature range allows for versatile use

Disadvantages: - Limited maximum collector current (100mA) - Restricted maximum collector-emitter voltage (30V) - Relatively low power dissipation capability (200mW)

Applicable Range of Products

  • Audio Amplifiers
  • RF Amplifiers
  • Switching Circuits
  • Oscillators
  • Logic Gates

Working Principles

The NB3F8L3010CMNG is an NPN bipolar junction transistor. It consists of three layers of semiconductor material, namely the emitter, base, and collector. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows for signal amplification and switching.

Detailed Application Field Plans

  1. Audio Amplifiers: The transistor can be used to amplify weak audio signals, enhancing sound quality.
  2. RF Amplifiers: It is suitable for amplifying radio frequency signals in communication systems.
  3. Switching Circuits: The fast switching speed makes it ideal for digital switching applications.
  4. Oscillators: The transistor can be utilized in oscillator circuits to generate stable oscillations.
  5. Logic Gates: It can be incorporated into logic gate circuits for digital signal processing.

Detailed Alternative Models

  • NB3F8L3010CMN
  • NB3F8L3010CNG
  • NB3F8L3010CMNP
  • NB3F8L3010CMNPG

5 Common Technical Questions and Answers

  1. Q: What is the maximum collector current of NB3F8L3010CMNG? A: The maximum collector current is 100mA.

  2. Q: What is the operating temperature range of this transistor? A: The operating temperature range is -55°C to +150°C.

  3. Q: Can NB3F8L3010CMNG be used in high-power applications? A: No, it is more suitable for low-power applications due to its limited power dissipation capability.

  4. Q: What is the purpose of the base terminal in this transistor? A: The base terminal controls the flow of current between the collector and emitter terminals, allowing for signal amplification and switching.

  5. Q: Is NB3F8L3010CMNG compatible with logic gate circuits? A: Yes, it can be integrated into logic gate circuits for digital signal processing.