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MMBT3904SL
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MMBT3904SL - Encyclopedia Entry

Product Overview

The MMBT3904SL belongs to the category of small signal NPN transistors. It is commonly used in amplification and switching applications due to its high frequency and low power characteristics. The transistor comes in a SOT-23 package and is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

  • Maximum Power Dissipation: 350mW
  • Collector-Base Voltage: 60V
  • Collector Current: 200mA
  • DC Current Gain (hFE): 100 - 300
  • Transition Frequency: 250MHz
  • Package Type: SOT-23

Detailed Pin Configuration

The MMBT3904SL transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage gain
  • Low noise
  • Fast switching speed
  • Small footprint

Advantages

  • Versatile application range
  • Compact size
  • Suitable for high-frequency circuits

Disadvantages

  • Limited maximum power dissipation
  • Moderate collector current rating

Working Principles

The MMBT3904SL operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing for amplification or switching of signals.

Detailed Application Field Plans

The MMBT3904SL is widely used in the following applications: - Audio amplifiers - Signal amplification in sensor circuits - Switching circuits in electronic devices - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBT3904SL include: - 2N3904 - BC547 - 2SC945 - PN2222A

In conclusion, the MMBT3904SL is a versatile small signal NPN transistor suitable for various amplification and switching applications. Its compact size and high frequency characteristics make it a popular choice in the electronics industry.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MMBT3904SL i tekniska lösningar

  1. What is the MMBT3904SL?

    • The MMBT3904SL is a general-purpose NPN transistor commonly used in amplification and switching applications.

  2. What are the key specifications of the MMBT3904SL?

    • The MMBT3904SL typically has a maximum collector current of 200mA, a maximum collector-base voltage of 40V, and a maximum power dissipation of 350mW.

  3. How can I use the MMBT3904SL in an amplifier circuit?

    • The MMBT3904SL can be used as a small-signal amplifier in audio or other low-power applications by biasing it properly and connecting it in a common-emitter configuration.

  4. Can the MMBT3904SL be used for switching applications?

    • Yes, the MMBT3904SL can be used to switch moderate loads on and off when biased properly and connected in a common-emitter or other suitable configuration.

  5. What are some typical applications of the MMBT3904SL in technical solutions?

    • The MMBT3904SL is commonly used in audio amplifiers, signal processing circuits, voltage regulators, and various digital logic circuits.

  6. What are the temperature considerations for using the MMBT3904SL?

    • The MMBT3904SL has a maximum operating temperature of around 150°C, so it's important to consider heat dissipation and thermal management in high-temperature environments.

  7. How do I select appropriate biasing resistors for the MMBT3904SL?

    • The selection of biasing resistors depends on the specific application and desired operating point, and can be calculated using the transistor's datasheet and relevant circuit design equations.

  8. Can the MMBT3904SL be used in low-power battery-operated devices?

    • Yes, the MMBT3904SL's low power dissipation and moderate current handling make it suitable for use in low-power and battery-operated devices.

  9. What are the typical gain characteristics of the MMBT3904SL?

    • The MMBT3904SL typically has a current gain (hFE) ranging from 100 to 300, depending on the operating conditions and biasing.

  10. Are there any common pitfalls to avoid when using the MMBT3904SL in technical solutions?

    • It's important to avoid exceeding the maximum ratings specified in the datasheet, ensure proper heat dissipation, and consider the effects of temperature on the transistor's performance. Additionally, attention should be paid to proper biasing and circuit layout to minimize noise and instability.