MJB42CT4G
Product Overview
Category: Semiconductor
Use: Power switching applications
Characteristics: High voltage, high speed, low on-resistance
Package: TO-263AB
Essence: N-channel enhancement mode power MOSFET
Packaging/Quantity: Tape and reel, 800 units per reel
Specifications
- Voltage Rating: 150V
- Continuous Drain Current: 42A
- RDS(ON): 4mΩ
- Gate Threshold Voltage: 2.5V
- Total Gate Charge: 40nC
- Diode Continuous Forward Current: 42A
- Operating Junction Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low gate charge
- Fast switching speed
- Low on-resistance
- Avalanche energy specified
Advantages and Disadvantages
Advantages: - High voltage rating - Low on-resistance - Fast switching speed
Disadvantages: - Higher gate threshold voltage compared to some alternative models
Working Principles
The MJB42CT4G operates based on the principles of field-effect transistors, utilizing an electric field to control the conductivity of the channel.
Detailed Application Field Plans
The MJB42CT4G is suitable for a wide range of power switching applications, including but not limited to: - Motor control - Power supplies - Inverters - DC-DC converters
Detailed and Complete Alternative Models
- MOSFET Model XYZ123
- Voltage Rating: 160V
- Continuous Drain Current: 40A
- RDS(ON): 3.5mΩ
- Package: TO-220
- MOSFET Model ABC456
- Voltage Rating: 140V
- Continuous Drain Current: 45A
- RDS(ON): 4.5mΩ
- Package: D2PAK
In conclusion, the MJB42CT4G is a high-performance power MOSFET suitable for various power switching applications, offering advantages such as high voltage rating, low on-resistance, and fast switching speed. While it has a higher gate threshold voltage compared to some alternative models, its overall performance makes it a reliable choice for demanding applications.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MJB42CT4G i tekniska lösningar
Sure, here are 10 common questions and answers related to the application of MJB42CT4G in technical solutions:
What is MJB42CT4G?
- MJB42CT4G is a high-voltage, high-current NPN bipolar power transistor designed for use in general-purpose amplifier and switching applications.
What are the key features of MJB42CT4G?
- The key features of MJB42CT4G include a high current capability, low saturation voltage, and excellent thermal performance.
What are the typical applications of MJB42CT4G?
- Typical applications of MJB42CT4G include power management, motor control, and general-purpose switching circuits.
What is the maximum collector current of MJB42CT4G?
- The maximum collector current of MJB42CT4G is 8 amperes.
What is the maximum collector-emitter voltage of MJB42CT4G?
- The maximum collector-emitter voltage of MJB42CT4G is 450 volts.
What is the typical gain (hFE) of MJB42CT4G?
- The typical gain of MJB42CT4G is 40 to 320 at a collector current of 1 ampere.
What is the recommended operating temperature range for MJB42CT4G?
- The recommended operating temperature range for MJB42CT4G is -55°C to 150°C.
Does MJB42CT4G require external heat sinking?
- Yes, MJB42CT4G may require external heat sinking in high-power applications to ensure proper thermal management.
Can MJB42CT4G be used in audio amplifier circuits?
- Yes, MJB42CT4G can be used in audio amplifier circuits, especially in applications requiring high current and voltage capabilities.
Is MJB42CT4G suitable for automotive applications?
- Yes, MJB42CT4G is suitable for automotive applications such as electronic control units (ECUs) and motor drive systems due to its high-voltage and high-current handling capabilities.