ON Semiconductor
Bild kan vara representation.
Se specifikationer för produktinformation.
BD439S
Visa detalj Datablad

BD439S Encyclopedia Entry

Product Overview

Belongs to: Semiconductor Devices
Category: Transistor
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-126
Essence: NPN silicon epitaxial planar transistor
Packaging/Quantity: Typically sold in packs of 10

Specifications

  • Collector-Emitter Voltage (VCEO): 80V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1.5A
  • Power Dissipation (PD): 12.5W
  • Transition Frequency (ft): 4MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Complementary PNP type available (BD440S)

Advantages

  • Suitable for audio amplification and general switching applications
  • Reliable performance under high voltage and current conditions

Disadvantages

  • Limited power dissipation compared to some alternative models
  • Moderate transition frequency may not be suitable for high-frequency applications

Working Principles

The BD439S operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

  1. Audio Amplification: The BD439S is commonly used in audio amplifier circuits due to its high voltage and current capabilities.
  2. General Switching: It can be employed in various electronic switching applications, such as relay drivers and motor control.

Detailed and Complete Alternative Models

  1. BD437S
  2. BD438S
  3. BD440S
  4. 2N3055
  5. TIP31C

Note: The above list is not exhaustive and there are several other alternative models available in the market.

This comprehensive entry provides an in-depth understanding of the BD439S, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, making it a valuable resource for individuals seeking information about this semiconductor device.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BD439S i tekniska lösningar

  1. What is BD439S?

    • BD439S is a PNP silicon power transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of BD439S?

    • The key features of BD439S include high current capability, low collector-emitter saturation voltage, and complementary NPN type BD438S.

  3. What are the typical applications of BD439S?

    • Typical applications of BD439S include audio amplifiers, power supply regulators, and motor control circuits.

  4. What is the maximum collector current of BD439S?

    • The maximum collector current of BD439S is 4A.

  5. What is the maximum collector-emitter voltage of BD439S?

    • The maximum collector-emitter voltage of BD439S is 80V.

  6. What is the thermal resistance of BD439S?

    • The thermal resistance of BD439S is typically 2.5°C/W.

  7. Is BD439S suitable for high-power applications?

    • Yes, BD439S is suitable for high-power applications due to its high current capability and low collector-emitter saturation voltage.

  8. Can BD439S be used in audio amplifier circuits?

    • Yes, BD439S is commonly used in audio amplifier circuits due to its high current capability and low distortion characteristics.

  9. What is the operating temperature range of BD439S?

    • The operating temperature range of BD439S is typically -65°C to 150°C.

  10. Is BD439S RoHS compliant?

    • Yes, BD439S is RoHS compliant, making it suitable for use in environmentally sensitive applications.