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2SD1815S-TL-H

2SD1815S-TL-H

Product Overview

Category

The 2SD1815S-TL-H belongs to the category of semiconductor devices.

Use

It is commonly used as a switching transistor in various electronic circuits.

Characteristics

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Package

The 2SD1815S-TL-H is typically available in a TO-126 package.

Essence

This product serves as a crucial component in amplifiers, power supplies, and other electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 1.5A
  • Power Dissipation (PD): 1.25W
  • Transition Frequency (fT): 150MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The 2SD1815S-TL-H typically has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage capability allows for use in various applications.
  • Low collector-emitter saturation voltage ensures efficient operation.
  • Fast switching speed enables quick response in electronic circuits.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Disadvantages

  • Limited maximum collector current compared to some alternative models
  • Relatively lower transition frequency

Working Principles

The 2SD1815S-TL-H operates based on the principles of bipolar junction transistors, utilizing its three terminals to control the flow of current through the device.

Detailed Application Field Plans

The 2SD1815S-TL-H finds application in: - Audio amplifiers - Power supply circuits - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2SD1815S-TL-H include: - 2N3904 - BC547 - 2SC945

In conclusion, the 2SD1815S-TL-H is a versatile semiconductor device with high voltage capability, making it suitable for a wide range of electronic applications. Its fast switching speed and low collector-emitter saturation voltage are key advantages, although users should consider alternative models based on specific requirements.

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