2SB815-7-TB-E
Product Category: Transistor
Basic Information Overview: - Category: Electronic Component - Use: Amplification and Switching in Electronic Circuits - Characteristics: High Voltage, Low Power Dissipation, Small Package Size - Package: TO-126 - Essence: NPN Bipolar Junction Transistor - Packaging/Quantity: Tape and Box, 1000 units per box
Specifications: - Collector-Base Voltage (VCBO): 60V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 1A - Power Dissipation (PD): 1W - Transition Frequency (fT): 150MHz
Detailed Pin Configuration: - Pin 1 (E): Emitter - Pin 2 (B): Base - Pin 3 (C): Collector
Functional Features: - High Voltage Capability - Fast Switching Speed - Low Saturation Voltage
Advantages: - Suitable for High Voltage Applications - Compact Package Size - Low Power Dissipation
Disadvantages: - Limited Current Handling Capacity - Moderate Transition Frequency
Working Principles: The 2SB815-7-TB-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio Amplifiers - Switching Circuits - Voltage Regulators
Detailed and Complete Alternative Models: - 2N3904 - BC547 - S8050
This comprehensive entry provides a detailed overview of the 2SB815-7-TB-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av 2SB815-7-TB-E i tekniska lösningar
What is the maximum collector current of 2SB815-7-TB-E?
- The maximum collector current of 2SB815-7-TB-E is 3A.
What is the maximum collector-emitter voltage of 2SB815-7-TB-E?
- The maximum collector-emitter voltage of 2SB815-7-TB-E is 60V.
What is the power dissipation of 2SB815-7-TB-E?
- The power dissipation of 2SB815-7-TB-E is 1W.
What are the typical applications of 2SB815-7-TB-E?
- Typical applications of 2SB815-7-TB-E include audio amplification, switching, and power control in electronic circuits.
What is the gain (hFE) of 2SB815-7-TB-E?
- The gain (hFE) of 2SB815-7-TB-E typically ranges from 60 to 320.
Is 2SB815-7-TB-E suitable for low-power applications?
- Yes, 2SB815-7-TB-E is suitable for low-power applications due to its low power dissipation and moderate gain.
Can 2SB815-7-TB-E be used in high-frequency applications?
- While 2SB815-7-TB-E can be used in some high-frequency applications, it is more commonly utilized in low to moderate frequency circuits.
What are the thermal characteristics of 2SB815-7-TB-E?
- The thermal resistance from junction to case (RthJC) of 2SB815-7-TB-E is typically around 83°C/W.
Does 2SB815-7-TB-E require a heat sink in certain applications?
- Yes, in high-power or high-temperature applications, it is recommended to use a heat sink with 2SB815-7-TB-E to ensure proper thermal management.
Are there any specific precautions to consider when using 2SB815-7-TB-E in technical solutions?
- It is important to ensure proper biasing and operating conditions to prevent overloading and overheating of 2SB815-7-TB-E. Additionally, attention should be given to proper PCB layout and heat dissipation in the application circuit.