MRF8HP21130HR3

Product Overview

The MRF8HP21130HR3 belongs to the category of high-power RF transistors and is designed for use in high-frequency applications. This transistor exhibits characteristics such as high power output, excellent linearity, and low distortion. It is typically packaged in a compact and rugged housing, ensuring durability and reliability. The essence of this product lies in its ability to amplify radio frequency signals efficiently. The packaging typically includes a single unit of the transistor.

Specifications

• Frequency Range: 2110 - 2170 MHz
• Output Power: 130 Watts
• Gain: 17 dB
• Package Type: NI-1230H

Detailed Pin Configuration

The MRF8HP21130HR3 features a detailed pin configuration with specific pins designated for input, output, biasing, and grounding. These pins are crucial for proper integration into RF circuitry and must be carefully considered during the design phase.

Functional Features

• High Power Output: Capable of delivering 130 Watts of power.
• Excellent Linearity: Ensures minimal signal distortion.
• Broad Frequency Range: Operates within the 2110 - 2170 MHz band.

Advantages and Disadvantages

Advantages

• High power output capability
• Low distortion and excellent linearity
• Wide operating frequency range

Disadvantages

• Higher power dissipation compared to lower power transistors
• Sensitive to improper handling and static discharge

Working Principles

The MRF8HP21130HR3 operates based on the principles of amplification and modulation. When a radio frequency signal is applied at the input, the transistor amplifies it while maintaining linearity and low distortion. This amplified signal can then be utilized for various communication and broadcasting applications.

Detailed Application Field Plans

This transistor is well-suited for use in high-power RF amplifiers, base stations, and other wireless communication systems operating within the 2110 - 2170 MHz frequency band. Its high power output and excellent linearity make it ideal for applications requiring robust and reliable RF amplification.

Detailed and Complete Alternative Models

• MRF8HP21200HR5: Operating at 2300 - 2400 MHz with 200 Watts output power.
• MRF7S21170HSR5: Covering 2110 - 2170 MHz with 170 Watts output power.

In conclusion, the MRF8HP21130HR3 is a high-power RF transistor designed for demanding applications that require high performance and reliability within the specified frequency range. Its robust characteristics and functional features make it a valuable component in various communication and broadcasting systems.

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