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MRF7S21080HR3
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MRF7S21080HR3

Product Overview

The MRF7S21080HR3 belongs to the category of high-frequency RF transistors and is designed for use in various applications such as wireless infrastructure, radar systems, and industrial, scientific, and medical (ISM) applications. This transistor exhibits high power gain, efficiency, and linearity, making it suitable for demanding RF power amplifier designs. The package type is a NI-780H, and it is RoHS compliant.

Characteristics

  • High power gain
  • High efficiency
  • High linearity
  • RoHS compliant

Package

The MRF7S21080HR3 is available in a NI-780H package and is typically sold in tape and reel packaging with a specific quantity per reel.

Specifications

  • Frequency Range: 2110 - 2170 MHz
  • Output Power: 80 Watts
  • Gain: 18 dB
  • Efficiency: 45%
  • Package Type: NI-780H
  • RoHS Compliant: Yes

Detailed Pin Configuration

The detailed pin configuration of the MRF7S21080HR3 is as follows: 1. Gate 1 2. Drain 1 3. Source 1 4. Gate 2 5. Drain 2 6. Source 2 7. Ground 8. Ground 9. Ground 10. Ground

Functional Features

  • High power gain for signal amplification
  • High efficiency for reduced power consumption
  • High linearity for accurate signal reproduction

Advantages

  • High power gain enables long-range transmission
  • High efficiency reduces power consumption
  • High linearity ensures accurate signal amplification

Disadvantages

  • May require additional heat dissipation mechanisms due to high power output
  • Sensitive to voltage fluctuations

Working Principles

The MRF7S21080HR3 operates on the principle of amplifying RF signals with high efficiency and linearity. When a signal is applied to the input, the transistor amplifies it while maintaining linearity and then delivers the amplified signal at the output.

Detailed Application Field Plans

The MRF7S21080HR3 is well-suited for applications in the following fields: - Wireless infrastructure, including base stations and repeaters - Radar systems for defense and surveillance - Industrial, scientific, and medical (ISM) applications requiring high-power RF amplification

Detailed and Complete Alternative Models

Some alternative models to the MRF7S21080HR3 include: - MRF7S21170H - MRF7S21110HR3 - MRF7S21210HR5

In conclusion, the MRF7S21080HR3 is a high-performance RF transistor suitable for a wide range of applications requiring high power gain, efficiency, and linearity. Its characteristics, specifications, and functional features make it an ideal choice for demanding RF power amplifier designs.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MRF7S21080HR3 i tekniska lösningar

  1. What is the MRF7S21080HR3?

    • The MRF7S21080HR3 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other RF power amplification systems.

  2. What frequency range does the MRF7S21080HR3 cover?

    • The MRF7S21080HR3 operates in the frequency range of 2110-2170 MHz, making it suitable for use in 3G and 4G LTE systems.

  3. What is the typical output power of the MRF7S21080HR3?

    • The typical output power of the MRF7S21080HR3 is around 80 watts, making it suitable for high-power RF amplification requirements.

  4. What are the key features of the MRF7S21080HR3?

    • The MRF7S21080HR3 features high gain, high linearity, and high efficiency, making it ideal for demanding RF power amplifier applications.

  5. What are the recommended operating conditions for the MRF7S21080HR3?

    • The MRF7S21080HR3 should be operated under specified voltage, current, and temperature conditions as outlined in the datasheet to ensure optimal performance and reliability.

  6. Does the MRF7S21080HR3 require any external matching components?

    • Yes, the MRF7S21080HR3 may require external matching components such as capacitors, inductors, and transmission lines to achieve optimum performance in specific applications.

  7. Is the MRF7S21080HR3 suitable for pulsed operation?

    • Yes, the MRF7S21080HR3 is designed to handle pulsed operation, making it suitable for applications with intermittent RF power requirements.

  8. What thermal management considerations should be taken into account when using the MRF7S21080HR3?

    • Proper heat sinking and thermal management are crucial for maintaining the reliability and performance of the MRF7S21080HR3, especially under high-power operation.

  9. Are there any application notes or reference designs available for the MRF7S21080HR3?

    • Yes, application notes and reference designs are available from the manufacturer to assist engineers in implementing the MRF7S21080HR3 in their technical solutions.

  10. Where can I find more detailed information about the MRF7S21080HR3?

    • Detailed information about the MRF7S21080HR3, including datasheets, application notes, and support resources, can be found on the manufacturer's website or by contacting their technical support team.