BFR92AW,115
Product Overview
- Category: Transistor
- Use: Amplification of radio frequency signals
- Characteristics: High frequency, low noise figure, small signal transistor
- Package: SOT143B
- Essence: Silicon NPN RF transistor
- Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Frequency: 12 GHz
- Voltage - Collector Emitter Breakdown (Max): 20V
- Current - Collector (Ic) (Max): 30mA
- Power - Max: 100mW
- Gain: 13dB
- Noise Figure: 1.3dB
Detailed Pin Configuration
- Pin 1: Emitter
- Pin 2: Base
- Pin 3: Collector
Functional Features
- High frequency capability
- Low noise figure
- Small signal amplification
Advantages
- Suitable for high frequency applications
- Low noise figure enhances signal quality
Disadvantages
- Limited power handling capacity
- Sensitive to voltage fluctuations
Working Principles
The BFR92AW,115 is designed to amplify radio frequency signals by utilizing the NPN junction transistor configuration. It operates by controlling the flow of current between its collector and emitter terminals based on the input at the base terminal.
Detailed Application Field Plans
- Radio frequency amplification in communication systems
- Signal processing in radar and microwave systems
- High-frequency signal amplification in medical equipment
Detailed and Complete Alternative Models
- BFR93A,115
- BFR96TS,235
- BFR181W,115
- BFR182W,115
This completes the entry for BFR92AW,115, providing comprehensive information about its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BFR92AW,115 i tekniska lösningar
What is the BFR92AW,115 transistor used for?
- The BFR92AW,115 is a high-frequency NPN transistor commonly used in RF applications such as amplifiers and oscillators.
What are the key specifications of the BFR92AW,115?
- The BFR92AW,115 has a maximum collector current of 30mA, a maximum power dissipation of 300mW, and a transition frequency of 6GHz.
Can the BFR92AW,115 be used in low-noise amplifier (LNA) circuits?
- Yes, the BFR92AW,115 is suitable for use in LNA circuits due to its low noise figure and high gain characteristics.
What are the typical operating conditions for the BFR92AW,115?
- The BFR92AW,115 operates at a maximum voltage of 15V and a frequency range of up to 6GHz.
Is the BFR92AW,115 suitable for surface mount technology (SMT) applications?
- Yes, the BFR92AW,115 is available in SOT343 (SC-70) surface mount package, making it suitable for SMT applications.
What are the recommended biasing configurations for the BFR92AW,115?
- Common biasing configurations for the BFR92AW,115 include fixed bias, emitter bias, and self-bias.
Can the BFR92AW,115 be used in wireless communication systems?
- Yes, the BFR92AW,115 is commonly used in wireless communication systems such as cellular base stations and WLAN devices.
What are the thermal considerations for the BFR92AW,115 in high-power applications?
- In high-power applications, proper heat sinking and thermal management should be employed to ensure the BFR92AW,115 operates within its specified temperature range.
Are there any common alternative transistors to the BFR92AW,115?
- Alternative transistors with similar characteristics to the BFR92AW,115 include the BFU550X and BFR96TS.
Where can I find detailed application notes and reference designs for the BFR92AW,115?
- Detailed application notes and reference designs for the BFR92AW,115 can be found on the manufacturer's website or in technical literature related to RF circuit design.