BFQ67W,135

Product Overview

Category

BFQ67W,135 belongs to the category of RF transistors.

Use

It is used in high-frequency applications such as amplifiers and oscillators.

Characteristics

• High frequency capability
• Low noise figure
• High gain

Package

The BFQ67W,135 comes in a small SOT343R package.

Essence

This transistor is essential for high-frequency signal amplification and processing.

Packaging/Quantity

The BFQ67W,135 is typically packaged in reels containing 3000 units.

Specifications

• Frequency Range: 2.5 GHz
• Power Gain: 13 dB
• Noise Figure: 1.8 dB
• Collector Current: 50 mA
• Collector-base Voltage: 15 V
• Collector-emitter Voltage: 12 V

Detailed Pin Configuration

The BFQ67W,135 has a 4-pin configuration: 1. Base 2. Emitter 3. Collector 4. Not connected (NC)

Functional Features

• High-frequency capability
• Low noise figure
• High gain
• Small package size

Advantages

• Suitable for high-frequency applications
• Low noise figure improves signal quality
• Compact package size allows for space-efficient designs

Disadvantages

• Limited power handling capability
• Higher cost compared to standard transistors

Working Principles

The BFQ67W,135 operates based on the principles of bipolar junction transistors, utilizing its high-frequency capabilities to amplify signals with low noise.

Detailed Application Field Plans

The BFQ67W,135 is ideal for use in: - Cellular base stations - Microwave communication systems - Radar systems - Satellite communication equipment

Detailed and Complete Alternative Models

• BFR93A
• BFG591
• BFT66

In conclusion, the BFQ67W,135 is a high-frequency RF transistor with excellent performance characteristics suitable for various communication and radar applications.

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