BFG540/X,215

Product Overview

Category:

The BFG540/X,215 belongs to the category of high-frequency transistors.

Use:

It is commonly used in RF amplification and high-frequency applications.

Characteristics:

• High gain
• Low noise figure
• High power handling capability

Package:

The BFG540/X,215 is available in a SOT343 (SC-70) package.

Essence:

This transistor is essential for amplifying high-frequency signals with low noise and high efficiency.

Packaging/Quantity:

The BFG540/X,215 is typically packaged in reels containing a specific quantity, such as 3000 units per reel.

Specifications

• Frequency Range: 2.5 GHz
• Power Dissipation: 1 W
• Voltage - Collector Emitter Breakdown (Max): 15 V
• Gain: 13 dB

Detailed Pin Configuration

The BFG540/X,215 has three pins: 1. Base 2. Emitter 3. Collector

Functional Features

• High gain for signal amplification
• Low noise figure for improved signal quality
• High power handling capability for robust performance

Advantages and Disadvantages

Advantages

• High gain
• Low noise figure
• Wide frequency range

Disadvantages

• Limited power dissipation capability
• Restricted voltage breakdown limit

Working Principles

The BFG540/X,215 operates based on the principles of bipolar junction transistors, utilizing its high gain and low noise figure to amplify high-frequency signals effectively.

Detailed Application Field Plans

The BFG540/X,215 is well-suited for use in the following applications: - RF amplifiers - Wireless communication systems - Radar systems - Test equipment

Detailed and Complete Alternative Models

Some alternative models to the BFG540/X,215 include: - BFG591/X,215 - BFG135/X,215 - BFG540/X,235

In conclusion, the BFG540/X,215 is a high-frequency transistor known for its high gain, low noise figure, and suitability for various RF applications.

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