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PDTB113ET,215
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PDTB113ET,215

Product Overview

Category: Transistor
Use: Amplification and Switching
Characteristics: High gain, low noise, small package size
Package: SOT416 (SC-75)
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 200mW
  • Transition Frequency (fT): 250MHz

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Small package size for space-constrained applications

Advantages and Disadvantages

Advantages: - High gain - Low noise - Small package size

Disadvantages: - Limited power dissipation - Moderate transition frequency

Working Principles

The PDTB113ET,215 is an NPN bipolar junction transistor that amplifies or switches electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.

Detailed Application Field Plans

The PDTB113ET,215 is suitable for various applications including: - Audio amplification - Sensor interfacing - Signal switching

Detailed and Complete Alternative Models

  • BC847B,215
  • BC846B,215
  • BC848B,215

This completes the English editing encyclopedia entry structure format for PDTB113ET,215.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av PDTB113ET,215 i tekniska lösningar

  1. What is PDTB113ET,215?

    • PDTB113ET,215 is a specific type of diode used in electronic circuits for various technical applications.

  2. What are the key specifications of PDTB113ET,215?

    • The key specifications of PDTB113ET,215 include its maximum voltage, current rating, and frequency response.

  3. How is PDTB113ET,215 typically used in technical solutions?

    • PDTB113ET,215 is commonly used in signal processing, switching, and amplification circuits due to its high-speed performance and low power consumption.

  4. What are the typical operating conditions for PDTB113ET,215?

    • PDTB113ET,215 is designed to operate within specific temperature, voltage, and current ranges, which should be carefully considered in technical solutions.

  5. Are there any common issues or limitations associated with PDTB113ET,215?

    • Some common issues include thermal management, voltage spikes, and compatibility with other components in the circuit.

  6. Can PDTB113ET,215 be used in high-frequency applications?

    • Yes, PDTB113ET,215 is suitable for high-frequency applications due to its fast response time and low parasitic capacitance.

  7. What are the recommended circuit configurations for integrating PDTB113ET,215?

    • Common circuit configurations include common-emitter amplifiers, switch-mode power supplies, and pulse generators.

  8. Does PDTB113ET,215 require any special handling or precautions during assembly?

    • It's important to follow proper ESD (electrostatic discharge) precautions and soldering techniques to avoid damaging PDTB113ET,215 during assembly.

  9. Are there any alternative components that can be used in place of PDTB113ET,215?

    • Depending on the specific requirements, alternative diodes with similar characteristics may be considered as substitutes for PDTB113ET,215.

  10. Where can I find detailed application notes or reference designs for using PDTB113ET,215 in technical solutions?

    • Detailed application notes and reference designs can often be found in the datasheet provided by the manufacturer, as well as in technical literature and online resources related to electronic circuit design.