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BUK9MGP-55PTS,518
Product Overview
Category: Power MOSFET
Use: Switching applications
Characteristics: High power handling, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power management
Packaging/Quantity: Tape and Reel
Specifications
- Voltage - Drain-Source Breakdown (Max): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance for efficient power management
- Fast switching speed for improved performance
- High power handling capability for demanding applications
Advantages and Disadvantages
Advantages: - High power handling - Low on-resistance - Fast switching speed
Disadvantages: - Higher gate charge compared to some alternative models - Relatively higher input capacitance
Working Principles
The BUK9MGP-55PTS,518 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in switching applications.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
- IRF540N
- FDP8870
- STP75NF75
Note: The above list is not exhaustive and serves as a starting point for alternative model exploration.
This content provides a comprehensive overview of the BUK9MGP-55PTS,518, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BUK9MGP-55PTS,518 i tekniska lösningar
What is BUK9MGP-55PTS,518?
- BUK9MGP-55PTS,518 is a N-channel 55 V MOSFET with a low on-state resistance designed for use in various technical solutions.
What are the key specifications of BUK9MGP-55PTS,518?
- The key specifications include a voltage rating of 55 V, a continuous drain current of 75 A, and a low on-state resistance.
In what technical applications can BUK9MGP-55PTS,518 be used?
- BUK9MGP-55PTS,518 can be used in applications such as power supplies, motor control, and automotive systems.
What are the thermal characteristics of BUK9MGP-55PTS,518?
- The MOSFET has a low thermal resistance and is designed to operate within specified temperature ranges for reliable performance.
How does BUK9MGP-55PTS,518 contribute to energy efficiency in technical solutions?
- BUK9MGP-55PTS,518's low on-state resistance helps minimize power losses and improve overall energy efficiency in various applications.
Are there any recommended operating conditions for BUK9MGP-55PTS,518?
- It is important to operate BUK9MGP-55PTS,518 within its specified voltage, current, and temperature limits for optimal performance and reliability.
Does BUK9MGP-55PTS,518 require any specific driver or control circuitry?
- BUK9MGP-55PTS,518 may require appropriate gate drive circuitry to ensure proper switching and protection against overvoltage or overcurrent conditions.
What are the typical failure modes associated with BUK9MGP-55PTS,518?
- Common failure modes may include overcurrent stress, overtemperature conditions, and voltage transients, which should be considered in the design of protective measures.
Can BUK9MGP-55PTS,518 be used in high-frequency switching applications?
- The MOSFET's datasheet provides information on its switching characteristics and suitability for high-frequency operation.
Where can I find detailed application notes or reference designs using BUK9MGP-55PTS,518?
- Application notes and reference designs for BUK9MGP-55PTS,518 can often be found on the manufacturer's website or through technical support channels.