2PB1219AR,135

Product Overview

• Category: Electronic Component
• Use: Signal Amplification and Switching
• Characteristics: High Gain, Low Noise, Small Form Factor
• Package: SOT-23
• Essence: NPN Bipolar Transistor
• Packaging/Quantity: Reel of 3000 units

Specifications

• Maximum Collector-Base Voltage (Vcb): 50V
• Maximum Collector Current (Ic): 100mA
• DC Current Gain (hFE): 100 - 400
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

• Pin 1 (Emitter): Connects to the emitter region of the transistor
• Pin 2 (Base): Connects to the base region of the transistor
• Pin 3 (Collector): Connects to the collector region of the transistor

Functional Features

• Signal amplification in electronic circuits
• Switching applications in digital and analog circuits
• Suitable for low-power applications due to its low current and voltage ratings

Advantages and Disadvantages

• Advantages:

  • High gain and low noise characteristics
  • Small form factor for space-constrained designs
  • Wide operating temperature range

• Disadvantages:

  • Limited maximum collector current compared to other transistors
  • Moderate transition frequency for high-frequency applications

Working Principles

The 2PB1219AR,135 operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the voltage applied to the base terminal. When used in amplification, small variations in the base current result in larger variations in the collector current, enabling signal amplification.

Detailed Application Field Plans

• Audio Amplifiers
• Sensor Interface Circuits
• Low-Power Switching Circuits
• Oscillator Circuits

Detailed and Complete Alternative Models

• 2N3904
• BC547
• 2SC945

This comprehensive entry provides an in-depth understanding of the 2PB1219AR,135, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.