2N5114UB

Product Overview

The 2N5114UB belongs to the category of semiconductor devices and is specifically a NPN silicon transistor. This transistor is commonly used for amplification and switching applications due to its high current and voltage capabilities. The 2N5114UB exhibits characteristics such as low noise, high gain, and fast switching speed. It is typically packaged in a TO-92 package and is available in various quantities.

Specifications

Maximum Collector-Emitter Voltage: 50V
Maximum Collector Current: 100mA
Power Dissipation: 625mW
Transition Frequency: 100MHz
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N5114UB transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

High current and voltage capability
Low noise and high gain
Fast switching speed

Advantages and Disadvantages

Advantages

Suitable for amplification and switching applications
Low noise performance
High gain characteristics

Disadvantages

Limited maximum collector current
Relatively low transition frequency

Working Principles

The 2N5114UB operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of signals.

Detailed Application Field Plans

The 2N5114UB is commonly used in the following applications: - Audio amplifiers - Signal amplification circuits - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N5114UB include: - 2N3904 - BC547 - 2N2222

In conclusion, the 2N5114UB is a versatile NPN silicon transistor suitable for amplification and switching applications. Its high current and voltage capabilities, along with low noise and high gain characteristics, make it a popular choice in various electronic circuits.

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