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1N5913E3/TR13
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1N5913E3/TR13 - Semiconductor Diode

Basic Information Overview

  • Category: Semiconductor Diode
  • Use: Rectification and voltage regulation
  • Characteristics: High efficiency, low forward voltage drop, fast switching speed
  • Package: SOD-123
  • Essence: Silicon diode with high current capability
  • Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

  • Forward Voltage Drop: 0.7V
  • Reverse Voltage: 40V
  • Forward Current: 1A
  • Reverse Recovery Time: 4ns
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The 1N5913E3/TR13 is a SOD-123 packaged diode with the following pin configuration: - Pin 1: Anode - Pin 2: Cathode

Functional Features

  • Fast switching speed for high-frequency applications
  • Low forward voltage drop for minimal power loss
  • High current capability for robust performance

Advantages and Disadvantages

Advantages: - Efficient rectification and voltage regulation - Compact SOD-123 package for space-constrained designs - Fast reverse recovery time for reduced switching losses

Disadvantages: - Limited reverse voltage rating compared to other diodes - Sensitivity to temperature variations

Working Principles

The 1N5913E3/TR13 operates based on the principle of semiconductor junction behavior. When forward biased, it allows current flow with a low voltage drop. In reverse bias, it blocks the current flow until the breakdown voltage is reached.

Detailed Application Field Plans

This diode is commonly used in various electronic circuits such as: - Power supplies - Voltage regulators - Switching circuits - Overvoltage protection

Detailed and Complete Alternative Models

  • 1N5819: Higher reverse voltage rating
  • 1N4148: Faster switching speed
  • 1N4001: Higher current capability

This completes the entry for the 1N5913E3/TR13 semiconductor diode, covering its basic information, specifications, features, advantages and disadvantages, working principles, application field plans, and alternative models.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av 1N5913E3/TR13 i tekniska lösningar

  1. What is the 1N5913E3/TR13 diode used for?

    • The 1N5913E3/TR13 is a Zener diode commonly used for voltage regulation and protection in various electronic circuits.

  2. What is the maximum power dissipation of the 1N5913E3/TR13?

    • The maximum power dissipation of the 1N5913E3/TR13 is typically around 5 watts.

  3. What is the voltage rating of the 1N5913E3/TR13?

    • The 1N5913E3/TR13 has a nominal voltage rating of 3.3 volts.

  4. How does the 1N5913E3/TR13 provide voltage regulation?

    • The 1N5913E3/TR13 operates in the reverse-biased breakdown region, maintaining a nearly constant voltage across its terminals when properly biased.

  5. Can the 1N5913E3/TR13 be used for overvoltage protection?

    • Yes, the 1N5913E3/TR13 can be used to protect sensitive components from overvoltage by shunting excess current away from the protected circuit.

  6. What are the typical applications of the 1N5913E3/TR13 in technical solutions?

    • The 1N5913E3/TR13 is commonly used in voltage regulators, voltage references, and precision power supplies.

  7. What is the temperature coefficient of the 1N5913E3/TR13?

    • The temperature coefficient of the 1N5913E3/TR13 is typically low, ensuring stable performance over a range of temperatures.

  8. Is the 1N5913E3/TR13 suitable for high-frequency applications?

    • The 1N5913E3/TR13 is generally not recommended for high-frequency applications due to its inherent capacitance and response time.

  9. What are the key electrical characteristics of the 1N5913E3/TR13?

    • Key electrical characteristics include its zener voltage, maximum current, and reverse leakage current.

  10. Are there any specific layout or mounting considerations for the 1N5913E3/TR13?

    • It is important to consider thermal management and proper PCB layout to ensure optimal performance and reliability of the 1N5913E3/TR13 in technical solutions.