PC28F128J3D75B TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: NAND Flash memory chip
• Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Memory Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles
• Page Size: 8 kilobytes
• Block Size: 512 kilobytes
• Read/Write Speed: Up to 50 megabytes per second

Pin Configuration

The PC28F128J3D75B TR flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. RY/BY#
34. CE#
35. VSS
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSS
45. VSS
46. VSS
47. VSS
48. VCC

Functional Features

• High-speed data transfer with fast read/write speeds
• Non-volatile memory retains data even when power is disconnected
• Large storage capacity for storing various types of data
• Reliable and durable, with high endurance and long data retention period
• Low power consumption for efficient operation

Advantages and Disadvantages

Advantages: - High capacity allows for ample data storage - Fast read/write speeds enable quick access to stored data - Non-volatile nature ensures data integrity during power loss - Durable and reliable for long-term use - Low power consumption for energy efficiency

Disadvantages: - Parallel interface may limit compatibility with certain devices - Limited endurance compared to some other flash memory technologies - Relatively higher cost per gigabyte compared to alternative models

Working Principles

The PC28F128J3D75B TR flash memory chip utilizes NAND flash technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels across its floating gate.

During a write operation, the desired data is programmed into the memory cells by applying appropriate voltages. Reading data involves sensing the voltage levels in the memory cells to retrieve the stored information.

The chip's control pins, such as ALE (Address Latch Enable), CLE (Command Latch Enable), RE# (Read Enable), WE# (Write Enable), and CE# (Chip Enable), facilitate the communication between the memory chip and the host device.

Detailed Application Field Plans

The PC28F128J3D75B TR flash memory chip finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Portable media players
6. Automotive infotainment systems
7. Industrial control systems
8. Embedded systems

Its high capacity, fast read/write speeds, and reliability make it suitable for data storage in these devices, where quick access to large amounts of data is crucial.

Alternative Models

If the PC28F128J3D75B TR flash memory chip is not available or does not meet specific requirements, alternative models with similar characteristics can be considered. Some alternative models include:

1. PC28F256J3D75B TR - 256 gigabit (32 gigabyte) capacity
2. PC28F512J3D75B TR - 512 gigabit (64 gigabyte)