PC28F00AP30BFB TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: Non-volatile, high-speed read/write operations, large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Capacity: 2GB
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 70ns
• Erase/Program Time: 2ms
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The PC28F00AP30BFB TR flash memory has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RP#/BYTE#: Ready/Busy or Byte/Word mode selection
9. RESET#: Reset input
10. WP#: Write protect
11. RY/BY#: Ready/Busy output
12. NC: No connection

Functional Features

• High-speed read and write operations
• Large storage capacity for data storage needs
• Non-volatile memory retains data even without power
• Reliable and durable for long-term use
• Low power consumption for energy efficiency

Advantages and Disadvantages

Advantages: - Fast access time for quick data retrieval - Large storage capacity allows for storing a significant amount of data - Non-volatile nature ensures data retention even during power loss - Low power consumption helps prolong battery life in portable devices

Disadvantages: - Limited endurance, as flash memory cells have a finite number of erase/write cycles - Relatively higher cost compared to other types of memory - Susceptible to data corruption in case of power surges or electromagnetic interference

Working Principles

The PC28F00AP30BFB TR flash memory operates based on the principles of floating-gate transistors. It uses electrically erasable programmable read-only memory (EEPROM) technology, which allows for both erasing and writing data electronically. The memory cells store data by trapping electrons in the floating gate, altering the transistor's conductive properties.

During read operations, the stored charge in the floating gate is measured to determine the logic state of each memory cell. When writing data, an electrical charge is applied to the control gate, modifying the conductive properties of the transistor and allowing electrons to be trapped or released from the floating gate.

Detailed Application Field Plans

The PC28F00AP30BFB TR flash memory finds applications in various electronic devices, including:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Stores photos and videos captured by the camera.
3. Solid-state drives (SSDs): Provides high-speed storage for computers and servers.
4. Automotive electronics: Used for firmware storage in car infotainment systems and engine control units.
5. Industrial equipment: Stores configuration data, firmware, and logs in industrial control systems.

Detailed and Complete Alternative Models

1. PC28F00AM29EWHA: Similar flash memory with different package and interface options.
2. PC28F00BM29EWHA: Higher capacity variant of the same flash memory series.
3. PC28F00CM29EWHA: Lower capacity variant with similar specifications.

These alternative models offer similar functionality and can be considered as alternatives depending on specific requirements and compatibility with the target system.

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