N25Q064A11ESECFE

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics: High-speed, low-power, high-density
• Package: 8-pin SOIC
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time: 4ms/1.5ms (typical)

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer with SPI interface
• Low power consumption for extended battery life
• Sector erase and byte program operations
• Hardware and software write protection options
• Deep power-down mode for reduced standby power

Advantages

• Fast read and write speeds enhance system performance
• High-density storage allows for large data capacity
• Low power consumption makes it suitable for portable devices
• Flexible write protection options ensure data security
• Wide operating temperature range enables use in various environments

Disadvantages

• Limited capacity compared to other memory technologies
• Relatively higher cost per unit of storage
• Susceptible to data loss in case of power failure during write operations

Working Principles

The N25Q064A11ESECFE is based on the NOR flash memory technology. It utilizes a floating gate transistor structure to store data. The memory cells are organized into sectors, which can be individually erased and programmed. The SPI interface allows for high-speed communication between the chip and the host device.

Detailed Application Field Plans

• Embedded systems: Used for firmware storage in microcontrollers and IoT devices.
• Automotive electronics: Enables data storage for infotainment systems and instrument clusters.
• Consumer electronics: Provides non-volatile storage for smartphones, tablets, and digital cameras.
• Industrial equipment: Used for program storage in PLCs, HMI panels, and control systems.

Detailed and Complete Alternative Models

1. N25Q128A11ESECFE: 128 Megabit (16 Megabyte) capacity, same package and characteristics.
2. N25Q256A11ESECFE: 256 Megabit (32 Megabyte) capacity, same package and characteristics.
3. N25Q512A11ESECFE: 512 Megabit (64 Megabyte) capacity, same package and characteristics.

Note: Please refer to the manufacturer's datasheet for complete specifications and alternative models.

This entry provides an overview of the N25Q064A11ESECFE flash memory chip, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. It serves as a comprehensive reference for understanding and utilizing this product in various electronic systems.