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N25Q064A11ESE40E

N25Q064A11ESE40E

Basic Information Overview

  • Category: Non-volatile Memory
  • Use: Data storage and retrieval
  • Characteristics:
    • High-speed performance
    • Large storage capacity
    • Low power consumption
  • Package: SOP8
  • Essence: Flash memory chip
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Memory Size: 64 Megabits (8 Megabytes)
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Program Time:
    • Sector Erase: 100ms (typical)
    • Page Program: 0.7ms (typical)
  • Data Retention: 20 years (typical)

Detailed Pin Configuration

The N25Q064A11ESE40E has a total of 8 pins arranged as follows:

┌───┬───┐ │ 1 │ 2 │ ├───┼───┤ │ 3 │ 4 │ ├───┼───┤ │ 5 │ 6 │ ├───┼───┤ │ 7 │ 8 │ └───┴───┘

  1. Chip Select (/CS): Active low input used to enable or disable the chip.
  2. Serial Clock (SCK): Input for synchronizing data transfer between the host and the chip.
  3. Serial Data Input (SI): Input for transferring data from the host to the chip.
  4. Serial Data Output (SO): Output for transferring data from the chip to the host.
  5. Hold (/HOLD): Input used to pause ongoing operations without resetting the chip.
  6. Write Protect (/WP): Input used to protect the memory from being written.
  7. Ground (GND): Reference ground for the chip.
  8. Power Supply (VCC): Power supply input for the chip.

Functional Features

  • High-speed read and write operations
  • Flexible erase options (sector, block, or chip erase)
  • Efficient programming of individual memory pages
  • Advanced security features (hardware protection, password protection)
  • Reliable data retention and endurance

Advantages and Disadvantages

Advantages

  • Fast data transfer rates
  • Low power consumption
  • Compact package size
  • High storage capacity
  • Long data retention period

Disadvantages

  • Limited number of erase/write cycles
  • Relatively higher cost compared to other memory technologies

Working Principles

The N25Q064A11ESE40E is based on the NOR flash memory technology. It utilizes a serial peripheral interface (SPI) for communication with the host device. The chip stores data in non-volatile memory cells that can be electrically erased and programmed. When reading data, the chip retrieves the stored information by sending it back to the host through the SPI interface. During programming or erasing, the chip modifies the state of the memory cells based on the received instructions.

Detailed Application Field Plans

The N25Q064A11ESE40E is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include: - Consumer electronics (smartphones, tablets, digital cameras) - Automotive systems (infotainment, navigation, instrument clusters) - Industrial control systems - Networking equipment - Medical devices

Detailed and Complete Alternative Models

  • N25Q032A13EF840F: 32 Megabit (4 Megabyte) variant of the same series
  • N25Q128A11EF840E: 128 Megabit (16 Megabyte) variant of the same series
  • MX25L6406EM2I-12G: 64 Megabit alternative from another manufacturer

Note: The above alternative models are provided for reference and may have slight variations in specifications and pin configuration.

This concludes the encyclopedia entry for the N25Q064A11ESE40E flash memory chip.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av N25Q064A11ESE40E i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of N25Q064A11ESE40E in technical solutions:

  1. Question: What is the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E is a flash memory device manufactured by Micron Technology. It offers 64 megabits (8 megabytes) of storage capacity.

  2. Question: What is the interface used by the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E uses a Serial Peripheral Interface (SPI) for communication with other devices.

  3. Question: What are some typical applications of the N25Q064A11ESE40E?
    Answer: This flash memory device is commonly used in various technical solutions, including embedded systems, consumer electronics, automotive applications, industrial control systems, and more.

  4. Question: What is the operating voltage range of the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E operates within a voltage range of 2.7V to 3.6V.

  5. Question: What is the maximum data transfer rate supported by the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E supports a maximum data transfer rate of up to 108 MHz.

  6. Question: Can the N25Q064A11ESE40E be easily integrated into existing designs?
    Answer: Yes, the N25Q064A11ESE40E is designed to be compatible with standard SPI interfaces, making it relatively easy to integrate into existing designs.

  7. Question: Does the N25Q064A11ESE40E support hardware and software write protection?
    Answer: Yes, the N25Q064A11ESE40E provides both hardware and software write protection features to prevent accidental or unauthorized modifications to the stored data.

  8. Question: What is the typical endurance of the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E has a typical endurance of 100,000 program/erase cycles per sector.

  9. Question: Does the N25Q064A11ESE40E support over-the-air (OTA) firmware updates?
    Answer: Yes, the N25Q064A11ESE40E can be used to store firmware updates, allowing for OTA updates in certain applications.

  10. Question: Are there any specific temperature or environmental requirements for the N25Q064A11ESE40E?
    Answer: The N25Q064A11ESE40E is designed to operate within a temperature range of -40°C to +85°C, making it suitable for various environments.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.