MT53B768M32D4TT-062 WT ES:B TR

Basic Information Overview

• Category: Memory Module
• Use: This product is a memory module used for data storage and retrieval in electronic devices.
• Characteristics: The MT53B768M32D4TT-062 WT ES:B TR memory module has high-speed performance, large storage capacity, and low power consumption. It is designed to meet the demands of modern electronic devices.
• Package: The memory module is packaged in a compact form factor that can be easily integrated into electronic devices.
• Essence: The essence of this product lies in its ability to store and retrieve data quickly and efficiently.
• Packaging/Quantity: The MT53B768M32D4TT-062 WT ES:B TR memory module is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Model: MT53B768M32D4TT-062 WT ES:B TR
• Capacity: 768 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 3200 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Error Correction: Non-ECC
• CAS Latency: CL22
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53B768M32D4TT-062 WT ES:B TR memory module has a 288-pin configuration. The pins are arranged in a specific order to ensure proper connectivity with the host device. Please refer to the product datasheet for the detailed pin configuration diagram.

Functional Features

• High-speed Performance: The MT53B768M32D4TT-062 WT ES:B TR memory module offers fast data transfer rates, allowing for quick access to stored information.
• Large Storage Capacity: With a capacity of 768MB, this memory module provides ample space for storing data.
• Low Power Consumption: The module is designed to operate efficiently with low power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - High-speed performance enhances overall system responsiveness. - Large storage capacity allows for the storage of a significant amount of data. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited capacity compared to higher-end memory modules. - Non-ECC error correction may result in occasional data errors.

Working Principles

The MT53B768M32D4TT-062 WT ES:B TR memory module works by storing data in an array of memory cells. These cells are organized into rows and columns, allowing for efficient retrieval of stored information. When the host device requests data, the memory controller accesses the appropriate memory cells and retrieves the requested information.

Detailed Application Field Plans

The MT53B768M32D4TT-062 WT ES:B TR memory module is widely used in various electronic devices, including: - Personal computers - Laptops - Servers - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

• MT53B512M32D2NP-062 WT ES:B TR
• MT53B256M16D1NP-062 WT ES:B TR
• MT53B128M8D1NP-062 WT ES:B TR
• MT53B64M4D1NP-062 WT ES:B TR

These alternative models offer different capacities and specifications to cater to various requirements.

In conclusion, the MT53B768M32D4TT-062 WT ES:B TR memory module is a high-performance memory module that provides fast data transfer rates, large storage capacity, and low power consumption. It is widely used in various electronic devices and offers several advantages, including high-speed performance and low power consumption. However, it has limitations in terms of capacity and error correction. Alternative models are available to suit different needs.