Micron Technology Inc.
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MT49H8M36SJ-25:B TR
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MT49H8M36SJ-25:B TR

Product Overview

Category

MT49H8M36SJ-25:B TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving data in electronic devices.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable data retention
  • Wide temperature range operation

Package

MT49H8M36SJ-25:B TR comes in a compact and durable package, designed to protect the memory module from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage solutions for various electronic applications.

Packaging/Quantity

MT49H8M36SJ-25:B TR is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging and quantity can vary based on customer requirements.

Specifications

  • Model: MT49H8M36SJ-25:B TR
  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 8 gigabits (1 gigabyte)
  • Speed: 25 nanoseconds (ns)
  • Voltage: 1.8 volts (V)
  • Interface: Double Data Rate 3 (DDR3)
  • Pin Count: 96 pins
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT49H8M36SJ-25:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. VDD
  20. VSS
  21. DQ16
  22. DQ17
  23. DQ18
  24. DQ19
  25. DQ20
  26. DQ21
  27. DQ22
  28. DQ23
  29. DQ24
  30. DQ25
  31. DQ26
  32. DQ27
  33. DQ28
  34. DQ29
  35. DQ30
  36. DQ31
  37. VSS
  38. VDD
  39. VSS
  40. A0
  41. A1
  42. A2
  43. A3
  44. A4
  45. A5
  46. A6
  47. A7
  48. A8
  49. A9
  50. A10
  51. A11
  52. A12
  53. A13
  54. A14
  55. A15
  56. A16
  57. A17
  58. A18
  59. A19
  60. A20
  61. A21
  62. A22
  63. A23
  64. A24
  65. A25
  66. A26
  67. A27
  68. A28
  69. A29
  70. A30
  71. A31
  72. VSS
  73. VDD
  74. VSS
  75. BA0
  76. BA1
  77. RAS#
  78. CAS#
  79. WE#
  80. CS#
  81. CK
  82. CK#
  83. CKE
  84. ODT
  85. RESET#
  86. VREFCA
  87. VSS
  88. VDD
  89. VSS
  90. DQS0#
  91. DQS1#
  92. DM0
  93. DM1
  94. VSS
  95. VDD
  96. VSS

Functional Features

  • High-speed data transfer rate
  • Burst mode operation for efficient data access
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Error correction code (ECC) support for data reliability
  • Multiple bank architecture for concurrent access

Advantages and Disadvantages

Advantages

  • Fast data transfer speeds enhance overall system performance.
  • Large storage capacity allows for extensive data storage.
  • Low power consumption helps conserve energy in electronic devices.
  • Reliable data retention ensures data integrity over time.
  • Wide temperature range operation enables usage in various environments.

Disadvantages

  • Higher cost compared to other memory options with lower capacities.
  • Limited compatibility with older device interfaces that do not support DDR3.

Working Principles

MT49H8M36SJ-25:B TR operates based on the

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT49H8M36SJ-25:B TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of MT49H8M36SJ-25:B TR in technical solutions:

  1. Q: What is the MT49H8M36SJ-25:B TR? A: The MT49H8M36SJ-25:B TR is a specific model of synchronous dynamic random-access memory (SDRAM) used in various technical solutions.

  2. Q: What is the capacity of the MT49H8M36SJ-25:B TR? A: The MT49H8M36SJ-25:B TR has a capacity of 8 gigabits (Gb), which is equivalent to 1 gigabyte (GB).

  3. Q: What is the speed rating of the MT49H8M36SJ-25:B TR? A: The MT49H8M36SJ-25:B TR has a speed rating of 25 nanoseconds (ns), indicating its access time.

  4. Q: What is the voltage requirement for the MT49H8M36SJ-25:B TR? A: The MT49H8M36SJ-25:B TR operates at a voltage of 1.35 volts (V) or 1.5 volts (V), depending on the configuration.

  5. Q: Can the MT49H8M36SJ-25:B TR be used in both commercial and industrial applications? A: Yes, the MT49H8M36SJ-25:B TR is designed to be used in both commercial and industrial applications.

  6. Q: What is the operating temperature range of the MT49H8M36SJ-25:B TR? A: The MT49H8M36SJ-25:B TR has an operating temperature range of -40°C to +85°C, making it suitable for various environments.

  7. Q: Does the MT49H8M36SJ-25:B TR support error correction code (ECC)? A: Yes, the MT49H8M36SJ-25:B TR supports ECC, which helps detect and correct errors in data transmission.

  8. Q: Can the MT49H8M36SJ-25:B TR be used in high-performance computing systems? A: Yes, the MT49H8M36SJ-25:B TR is suitable for use in high-performance computing systems due to its speed and capacity.

  9. Q: Is the MT49H8M36SJ-25:B TR compatible with different memory controllers? A: Yes, the MT49H8M36SJ-25:B TR is designed to be compatible with a wide range of memory controllers, ensuring flexibility in system integration.

  10. Q: Are there any specific design considerations when using the MT49H8M36SJ-25:B TR? A: It is important to consider factors such as power supply stability, signal integrity, and proper grounding when designing with the MT49H8M36SJ-25:B TR to ensure optimal performance.

Please note that the answers provided here are general and may vary depending on the specific technical solution and requirements.