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MT49H16M18CSJ-25:B TR

MT49H16M18CSJ-25:B TR

Product Overview

Category

MT49H16M18CSJ-25:B TR belongs to the category of memory products.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable data retention

Package

MT49H16M18CSJ-25:B TR comes in a compact and durable package, designed to protect the memory module from external factors such as moisture and physical damage.

Essence

The essence of MT49H16M18CSJ-25:B TR lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT49H16M18CSJ-25:B TR is typically packaged in trays or reels, with each package containing a specific quantity of memory modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: MT49H16M18CSJ-25:B TR
  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 16 megabytes (MB)
  • Speed: 25 MHz
  • Voltage: 3.3 volts (V)
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT49H16M18CSJ-25:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. A0
  20. A1
  21. A2
  22. A3
  23. A4
  24. A5
  25. A6
  26. A7
  27. A8
  28. A9
  29. A10
  30. A11
  31. A12
  32. A13
  33. A14
  34. A15
  35. A16
  36. A17
  37. A18
  38. /CAS
  39. /RAS
  40. /WE
  41. /CS
  42. /CKE
  43. /CLK
  44. VDD
  45. VSS

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Programmable CAS latency

Advantages and Disadvantages

Advantages

  • Fast and efficient data storage and retrieval
  • Large storage capacity
  • Low power consumption
  • Reliable data retention
  • Enhanced signal integrity with on-die termination

Disadvantages

  • Limited compatibility with certain older devices
  • Higher cost compared to other memory options

Working Principles

MT49H16M18CSJ-25:B TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the device it is connected to. The memory cells store data in the form of electrical charges, which can be read or written by the device.

Detailed Application Field Plans

MT49H16M18CSJ-25:B TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to MT49H16M18CSJ-25:B TR include: - MT49H16M18CBJ-25:B TR - MT49H16M18CFJ-25:B TR - MT49H16M18CHJ-25:B TR - MT49H16M18CQJ-25:B TR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory module for specific applications.

In conclusion, MT49H16M18CSJ-25:B TR is a high-performance memory module that offers fast data storage and retrieval capabilities. With its large capacity, low power consumption, and reliable data retention, it is widely used in various electronic devices across different industries.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT49H16M18CSJ-25:B TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of MT49H16M18CSJ-25:B TR in technical solutions:

  1. Q: What is the MT49H16M18CSJ-25:B TR? A: The MT49H16M18CSJ-25:B TR is a specific model of synchronous dynamic random-access memory (SDRAM) chip.

  2. Q: What is the purpose of using the MT49H16M18CSJ-25:B TR in technical solutions? A: The MT49H16M18CSJ-25:B TR is commonly used for high-performance computing, networking, and other applications that require fast and reliable memory access.

  3. Q: What is the capacity of the MT49H16M18CSJ-25:B TR? A: The MT49H16M18CSJ-25:B TR has a capacity of 16 megabits (Mb), which is equivalent to 2 megabytes (MB).

  4. Q: What is the operating voltage of the MT49H16M18CSJ-25:B TR? A: The MT49H16M18CSJ-25:B TR operates at a voltage of 1.35V.

  5. Q: What is the clock speed of the MT49H16M18CSJ-25:B TR? A: The MT49H16M18CSJ-25:B TR has a maximum clock speed of 250 MHz.

  6. Q: Can the MT49H16M18CSJ-25:B TR be used in both commercial and industrial applications? A: Yes, the MT49H16M18CSJ-25:B TR is designed to operate in a wide temperature range, making it suitable for both commercial and industrial applications.

  7. Q: Does the MT49H16M18CSJ-25:B TR support error correction code (ECC)? A: No, the MT49H16M18CSJ-25:B TR does not support ECC. It is a non-ECC memory chip.

  8. Q: What is the package type of the MT49H16M18CSJ-25:B TR? A: The MT49H16M18CSJ-25:B TR comes in a small form factor ball grid array (BGA) package.

  9. Q: Can the MT49H16M18CSJ-25:B TR be used in mobile devices such as smartphones or tablets? A: While it is technically possible to use the MT49H16M18CSJ-25:B TR in mobile devices, it is more commonly used in larger computing systems due to its higher capacity and power requirements.

  10. Q: Are there any specific design considerations when using the MT49H16M18CSJ-25:B TR in technical solutions? A: Yes, it is important to ensure proper power supply and signal integrity when designing with the MT49H16M18CSJ-25:B TR. It is also recommended to refer to the manufacturer's datasheet for detailed guidelines and specifications.