MT48V4M32LFB5-10:G TR

Product Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Surface mount technology (SMT) package
Essence: Dynamic Random Access Memory (DRAM) module
Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: MT48V4M32LFB5-10:G TR
• Memory Type: Synchronous DRAM (SDRAM)
• Density: 128 Megabytes (MB)
• Organization: 4 Megabits x 32 bits
• Operating Voltage: 3.3 Volts (V)
• Access Time: 10 nanoseconds (ns)
• Clock Frequency: 100 Megahertz (MHz)
• Interface: Parallel
• Package Type: 90-ball Ball Grid Array (BGA)

Detailed Pin Configuration

The MT48V4M32LFB5-10:G TR memory module has a total of 90 pins arranged in a 10x9 grid. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSS
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VSS
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSS
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. A15
55. VSS
56. BA0
57. BA1
58. RAS#
59. CAS#
60. WE#
61. CKE
62. CS#
63. VSS
64. CLK
65. VDD
66. VSS
67. DQM0
68. DQM1
69. VSS
70. DQS0
71. DQS1
72. DM0
73. DM1
74. VSS
75. VREF
76. VSS
77. VSS
78. VSS
79. VSS
80. VSS
81. VSS
82. VSS
83. VSS
84. VSS
85. VSS
86. VSS
87. VSS
88. VSS
89. VSS
90. VSS

Functional Features

• High-speed data access and retrieval
• Synchronous operation with the system clock
• Burst mode for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages: - High memory capacity - Fast access speed - Synchronous operation for efficient data transfer - Power-saving features - Improved signal integrity with on-die termination

Disadvantages: - Relatively higher power consumption compared to non-volatile memory - Volatile nature of the memory requires constant power supply

Working Principles

The MT48V4M32LFB5-10:G TR is a dynamic random access memory (DRAM) module that stores and retrieves data in a digital system. It operates synchronously with the system clock, allowing for efficient data transfer. The memory cells within the module store data as electrical charges in capacitors, which need to be refreshed periodically to maintain their state. The module supports burst mode, enabling the transfer of multiple data words in a single operation.

Detailed Application Field Plans

The MT48V4M32LFB5-10:G TR memory module finds applications in various fields, including:

1.