Micron Technology Inc.
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MT47H64M8CB-3:B TR
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MT47H64M8CB-3:B TR

Product Overview

Category

MT47H64M8CB-3:B TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile phones for storing and accessing data quickly.

Characteristics

  • High-speed data storage and retrieval capabilities
  • Volatile memory that requires constant power supply
  • Offers large storage capacity
  • Supports high data transfer rates
  • Compact size for easy integration into various electronic devices

Package

MT47H64M8CB-3:B TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H64M8CB-3:B TR is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 512 Megabytes (MB)
  • Organization: 64 Megabits x 8
  • Speed: 800 Megahertz (MHz)
  • Voltage: 1.5 Volts (V)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H64M8CB-3:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CK
  44. CKE
  45. CS#
  46. DM0
  47. DM1
  48. VSS
  49. VDD

Functional Features

  • High-speed data transfer and access
  • Low power consumption
  • Error correction capabilities
  • Auto-refresh and self-refresh modes for efficient operation
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operations for optimized performance

Advantages and Disadvantages

Advantages

  • Fast data transfer rates enhance overall system performance
  • Large storage capacity allows for the handling of extensive data
  • Compact size enables easy integration into various electronic devices
  • Error correction capabilities ensure data reliability

Disadvantages

  • Volatile memory requires constant power supply, leading to data loss in case of power failure
  • Relatively higher cost compared to other types of memory

Working Principles

MT47H64M8CB-3:B TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data is requested, it is accessed by reading the charge stored in the capacitors.

Detailed Application Field Plans

MT47H64M8CB-3:B TR finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers 4. Mobile phones and tablets 5. Networking equipment 6. Gaming consoles 7. Automotive electronics 8. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT47H64M8CB-3:B TR include: 1. MT47H128M8SH-25E:G 2. MT47H256M16HR-25E:H 3. MT47H512M8HQ-25E:E 4. MT47H1G8DM-25E:A 5. MT47H2G16DM-25E:C

These alternative models offer similar functionality and characteristics but may differ in terms of capacity, speed, and organization.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT47H64M8CB-3:B TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of MT47H64M8CB-3:B TR in technical solutions:

  1. Question: What is the capacity of the MT47H64M8CB-3:B TR memory module?
    Answer: The MT47H64M8CB-3:B TR has a capacity of 512 megabytes (MB).

  2. Question: What is the speed rating of this memory module?
    Answer: The MT47H64M8CB-3:B TR has a speed rating of 333 megahertz (MHz).

  3. Question: Is the MT47H64M8CB-3:B TR compatible with DDR3 memory slots?
    Answer: Yes, this memory module is designed for use with DDR3 memory slots.

  4. Question: Can I use multiple MT47H64M8CB-3:B TR modules together in a system?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity of your system.

  5. Question: What is the voltage requirement for the MT47H64M8CB-3:B TR?
    Answer: This memory module operates at a voltage of 1.5 volts.

  6. Question: Does the MT47H64M8CB-3:B TR support ECC (Error Correction Code)?
    Answer: No, this memory module does not support ECC.

  7. Question: What is the form factor of the MT47H64M8CB-3:B TR?
    Answer: This memory module follows the Small Outline DIMM (SODIMM) form factor.

  8. Question: Can I use the MT47H64M8CB-3:B TR in a laptop or notebook computer?
    Answer: Yes, SODIMM modules like the MT47H64M8CB-3:B TR are commonly used in laptops and notebooks.

  9. Question: Is this memory module compatible with both Intel and AMD platforms?
    Answer: Yes, the MT47H64M8CB-3:B TR is compatible with both Intel and AMD platforms that support DDR3 memory.

  10. Question: What is the operating temperature range for the MT47H64M8CB-3:B TR?
    Answer: This memory module has an operating temperature range of 0°C to 85°C.