Micron Technology Inc.
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MT47H64M8CB-3:B
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MT47H64M8CB-3:B

Product Overview

Category

MT47H64M8CB-3:B belongs to the category of semiconductor memory products.

Use

This product is primarily used as a dynamic random-access memory (DRAM) module in various electronic devices and systems.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size
  • Reliable performance

Package

MT47H64M8CB-3:B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

MT47H64M8CB-3:B is typically packaged in trays or reels, with each package containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 512 Megabytes (64 Megabytes x 8)
  • Speed: 1333 MHz
  • Voltage: 1.5V
  • Organization: 64M words x 8 bits
  • Interface: 204-pin SODIMM
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H64M8CB-3:B is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. VSS
  41. A0
  42. A1
  43. A2
  44. A3
  45. A4
  46. A5
  47. A6
  48. A7
  49. VSS
  50. A8
  51. A9
  52. A10
  53. A11
  54. A12
  55. A13
  56. A14
  57. A15
  58. VSS
  59. BA0
  60. BA1
  61. RAS#
  62. CAS#
  63. WE#
  64. VSS

Functional Features

  • High-speed data transfer
  • Random access capability
  • Refresh mechanism for maintaining data integrity
  • Error correction and detection capabilities
  • Low power standby mode
  • Burst mode operation for efficient data transfer

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Compact form factor
  • Reliable performance

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond a certain capacity

Working Principles

MT47H64M8CB-3:B operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The memory controller sends commands to read from or write to specific memory locations, enabling data transfer between the memory module and the device/system it is connected to.

Detailed Application Field Plans

MT47H64M8CB-3:B finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H64M8CB-3:B are: - MT47H128M8SH-25E: 1 Gigabyte DDR3 SDRAM module - MT47H256M16HR-25E: 2 Gigabyte DDR3 SDRAM module - MT47H512M32HR-25E: 4 Gigabyte DDR3 SDRAM module

These alternative models offer higher capacities and may have different speed ratings or form factors, providing flexibility for various system requirements.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT47H64M8CB-3:B i tekniska lösningar

  1. Question: What is the MT47H64M8CB-3:B?
    Answer: The MT47H64M8CB-3:B is a specific type of memory module commonly used in technical solutions.

  2. Question: What is the capacity of the MT47H64M8CB-3:B?
    Answer: The MT47H64M8CB-3:B has a capacity of 64 megabytes (MB).

  3. Question: What is the speed rating of the MT47H64M8CB-3:B?
    Answer: The MT47H64M8CB-3:B has a speed rating of 3, indicating its operating frequency.

  4. Question: Can the MT47H64M8CB-3:B be used in laptops or desktop computers?
    Answer: Yes, the MT47H64M8CB-3:B can be used in both laptops and desktop computers, as long as they are compatible with the module's specifications.

  5. Question: Is the MT47H64M8CB-3:B compatible with DDR3 or DDR4 systems?
    Answer: The MT47H64M8CB-3:B is compatible with DDR3 systems.

  6. Question: What voltage does the MT47H64M8CB-3:B operate at?
    Answer: The MT47H64M8CB-3:B operates at a voltage of 1.5V.

  7. Question: Can the MT47H64M8CB-3:B be used in server applications?
    Answer: Yes, the MT47H64M8CB-3:B can be used in server applications, provided that the server supports DDR3 memory modules.

  8. Question: Does the MT47H64M8CB-3:B support ECC (Error Correction Code)?
    Answer: No, the MT47H64M8CB-3:B does not support ECC.

  9. Question: What is the form factor of the MT47H64M8CB-3:B?
    Answer: The MT47H64M8CB-3:B has a small outline dual in-line memory module (SODIMM) form factor.

  10. Question: Can the MT47H64M8CB-3:B be used as a replacement for other memory modules?
    Answer: The compatibility of the MT47H64M8CB-3:B as a replacement depends on the specific requirements and compatibility of the system it is being used in. It is recommended to consult the system's documentation or manufacturer for compatibility information.