MT47H64M16HR-25E AIT:H

Product Overview

Category

The MT47H64M16HR-25E AIT:H belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H64M16HR-25E AIT:H offers fast data access and transfer rates, enabling efficient processing.
• Large capacity: With a capacity of 64 megabits (8 megabytes), this memory device can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable performance: It features robust error correction capabilities, ensuring data integrity and reliability.

Package

The MT47H64M16HR-25E AIT:H is available in a compact and standardized package, which facilitates easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

The MT47H64M16HR-25E AIT:H is typically packaged in trays or reels, with each package containing a specific quantity of memory devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 64 Megabits x 16 bits
• Operating Voltage: 2.5V
• Speed Grade: 25E
• Interface: Double Data Rate (DDR)
• Package Type: Advanced Interconnect Technology (AIT)
• Temperature Range: Industrial (-40°C to +85°C)

Detailed Pin Configuration

The MT47H64M16HR-25E AIT:H has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. NC
21. NC
22. WE#
23. CAS#
24. RAS#
25. CS#
26. CKE
27. BA0
28. BA1
29. A0
30. A1
31. A2
32. A3
33. A4
34. A5
35. A6
36. A7
37. A8
38. A9
39. A10
40. A11
41. A12
42. A13
43. A14
44. A15
45. A16
46. A17
47. A18
48. A19
49. A20
50. VSS

Functional Features

The MT47H64M16HR-25E AIT:H offers the following functional features:

1. High-speed data transfer: It supports fast data transfer rates, allowing for efficient processing and improved system performance.
2. Error correction: The product incorporates advanced error correction techniques to ensure data integrity and reliability.
3. Burst mode operation: It supports burst mode operations, enabling rapid consecutive data access.
4. Auto-refresh capability: The memory device automatically refreshes data to maintain its integrity over time.
5. Low power consumption: The product is designed to minimize power consumption, making it suitable for energy-efficient devices.

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance.
• Large storage capacity accommodates a significant amount of data.
• Reliable performance with robust error correction capabilities.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited compatibility with older systems that do not support DDR interfaces.
• Relatively higher cost compared to other memory technologies.

Working Principles

The MT47H64M16HR-25E AIT:H operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory device and the system. When a read or write command is issued, the memory controller coordinates the transfer of data between the device and the system bus.

Detailed Application Field Plans

The MT47H64M16HR-25E AIT:H finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks